APTM08TDUM04PG Microsemi Power Products Group, APTM08TDUM04PG Datasheet - Page 6

• Manufacturer Part Number: APTM08TDUM04PG
• Description: MOSFET MOD TRIPLE DUAL SRC SP6-P
• Manufacturer: Microsemi Power Products Group

Specifications of APTM08TDUM04PG

• Fet Type: 6 N-Channel (3-Phase Leg)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 4.5 mOhm @ 60A, 10V
• Drain To Source Voltage (vdss): 75V
• Current - Continuous Drain (id) @ 25° C: 120A
• Vgs(th) (max) @ Id: 4V @ 1mA
• Gate Charge (qg) @ Vgs: 153nC @ 10V
• Input Capacitance (ciss) @ Vds: 4530pF @ 25V
• Power - Max: 138W
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
0.75
0.25
120
100
300
250
200
150
100
0.5
80
60
40
20
50
0
0
0
25
25
20
Operating Frequency vs Drain Current
V
R
T
L=100µH
V
R
T
L=100µH
V
D=50%
R
T
T
DS
G
J
J
DS
G
=125°C
J
C
DS
=125°C
G
=5Ω
=125°C
=5Ω
=75°C
=40V
E
=5Ω
50
Switching Energy vs Current
=40V
50
=40V
on
40
Delay Times vs Current
I
D
I
I
75
D
75
D
, Drain Current (A)
, Drain Current (A)
, Drain Current (A)
switching
60
100 125 150 175 200
100 125 150 175 200
Hard
80
t
ZCS
d(off)
E
t
off
d(on)
ZVS
100
E
www.microsemi.com
on
120
1000
APTM08TDUM04PG
100
120
100
1.5
0.5
10
80
60
40
20
1
1
0
0
0.3
Switching Energy vs Gate Resistance
25
0
Source to Drain Diode Forward Voltage
V
I
T
L=100µH
V
R
T
L=100µH
D
J
DS
J
=120A
V
DS
G
=125°C
=125°C
=5Ω
SD
Rise and Fall times vs Current
=40V
=40V
50
0.5
10
, Source to Drain Voltage (V)
Gate Resistance (Ohms)
T
75
I
J
D
=150°C
0.7
, Drain Current (A)
20
100 125 150 175 200
T
0.9
30
J
=25°C
1.1
40
E
t
f
off
E
t
1.3
r
on
50
1.5
60
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