APTM08TDUM04PG Microsemi Power Products Group, APTM08TDUM04PG Datasheet - Page 6
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APTM08TDUM04PG
Manufacturer Part Number
APTM08TDUM04PG
Description
MOSFET MOD TRIPLE DUAL SRC SP6-P
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTM08TDUM04PG.pdf
(6 pages)
Specifications of APTM08TDUM04PG
Fet Type
6 N-Channel (3-Phase Leg)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
4.5 mOhm @ 60A, 10V
Drain To Source Voltage (vdss)
75V
Current - Continuous Drain (id) @ 25° C
120A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
153nC @ 10V
Input Capacitance (ciss) @ Vds
4530pF @ 25V
Power - Max
138W
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
0.75
0.25
120
100
300
250
200
150
100
0.5
80
60
40
20
50
0
0
0
25
25
20
Operating Frequency vs Drain Current
V
R
T
L=100µH
V
R
T
L=100µH
V
D=50%
R
T
T
DS
G
J
J
DS
G
=125°C
J
C
DS
=125°C
G
=5Ω
=125°C
=5Ω
=75°C
=40V
E
=5Ω
50
Switching Energy vs Current
=40V
50
=40V
on
40
Delay Times vs Current
I
D
I
I
75
D
75
D
, Drain Current (A)
, Drain Current (A)
, Drain Current (A)
switching
60
100 125 150 175 200
100 125 150 175 200
Hard
80
t
ZCS
d(off)
E
t
off
d(on)
ZVS
100
E
www.microsemi.com
on
120
1000
APTM08TDUM04PG
100
120
100
1.5
0.5
10
80
60
40
20
1
1
0
0
0.3
Switching Energy vs Gate Resistance
25
0
Source to Drain Diode Forward Voltage
V
I
T
L=100µH
V
R
T
L=100µH
D
J
DS
J
=120A
V
DS
G
=125°C
=125°C
=5Ω
SD
Rise and Fall times vs Current
=40V
=40V
50
0.5
10
, Source to Drain Voltage (V)
Gate Resistance (Ohms)
T
75
I
J
D
=150°C
0.7
, Drain Current (A)
20
100 125 150 175 200
T
0.9
30
J
=25°C
1.1
40
E
t
f
off
E
t
1.3
r
on
50
1.5
60
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