APTM10HM09FT3G Microsemi Power Products Group, APTM10HM09FT3G Datasheet

no-image

APTM10HM09FT3G

Manufacturer Part Number
APTM10HM09FT3G
Description
MOSFET MODULE FULL BRIDGE SP3
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTM10HM09FT3G

Fet Type
4 N-Channel (H-Bridge)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
10 mOhm @ 69.5A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
139A
Vgs(th) (max) @ Id
4V @ 2.5mA
Gate Charge (qg) @ Vgs
350nC @ 10V
Input Capacitance (ciss) @ Vds
9875pF @ 25V
Power - Max
390W
Mounting Type
Chassis Mount
Package / Case
SP3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute maximum ratings
All multiple inputs and outputs must be shorted together
* Specification of MOSFET device but output current must be limited to 75A to not exceed a delta of temperature
greater than 30°C for the connectors.
Symbol
R
V
MOSFET Power Module
V
E
E
I
I
P
DSon
I
DM
AR
DSS
AR
AS
D
GS
D
18
19
26
27
29
30
31
32
Example: 13/14 ; 29/30 ; 22/23 …
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
28 27 26
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Full - Bridge
2
15
Q1
Q2
29
3
25
4
30
22
23
13
23 22
14
7
8
7
31
Parameter
R1
8
20
32
Q3
Q4
10
19
18
11 12
16
11
10
4
3
16
15
14
13
www.microsemi.com
Application
Features
Benefits
T
T
T
c
c
c
V
R
I
= 25°C
= 80°C
= 25°C
D
APTM10HM09FT3G
DSS
DSon
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Power MOS V
Kelvin source for easy drive
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
RoHS compliant
= 139A @ Tc = 25°C
-
-
-
-
-
-
= 100V
-
= 9mΩ typ @ Tj = 25°C
Max ratings
Low R
Low input and Miller capacitance
Low gate charge
Fast intrinsic diode
Avalanche energy rated
Very rugged
Symmetrical design
3000
100 *
100
139
430
±30
390
100
10
50
®
DSon
FREDFETs
Unit
mΩ
mJ
W
V
A
V
A
1 – 6

Related parts for APTM10HM09FT3G

APTM10HM09FT3G Summary of contents

Page 1

... AS * Specification of MOSFET device but output current must be limited to 75A to not exceed a delta of temperature greater than 30°C for the connectors. These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTM10HM09FT3G V = 100V DSS R = 9mΩ typ @ Tj = 25°C ...

Page 2

... Peak Diode Recovery t Reverse Recovery Time rr Q Reverse Recovery Charge rr dv/dt numbers reflect the limitations of the circuit rather than the device itself. ≤ - 139A di/dt ≤ 700A/µ APTM10HM09FT3G = 25°C unless otherwise specified j Test Conditions T = 25° 0V,V = 100V 125°C ...

Page 3

... Symbol Characteristic R Resistance @ 25° 298.15 K 25/  exp B   SP3 Package outline (dimensions in mm See application note 1901 - Mounting Instructions for SP3 Power Modules on www.microsemi.com APTM10HM09FT3G To heatsink R T: Thermistor temperature 25    Thermistor value     −   ...

Page 4

... V , Drain to Source Voltage ( Drain Current DS(on) 1.2 Normalized to V =10V @ 69.5A GS 1.1 1 0.9 0 100 I , Drain Current (A) D APTM10HM09FT3G Single Pulse 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) 120 V DS 100 250µs pulse test @ < 0.5 duty cycle Drain Current vs Case Temperature ...

Page 5

... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 100000 Ciss 10000 Coss Crss 1000 100 Drain to Source Voltage (V) DS APTM10HM09FT3G ON resistance vs Temperature 2.5 V =10V 69.5A 2.0 D 1.5 1.0 0.5 0.0 -50 - Junction Temperature (°C) J Maximum Safe Operating Area 1000 ...

Page 6

... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTM10HM09FT3G 160 V ...

Related keywords