APTM50AM70FT1G Microsemi Power Products Group, APTM50AM70FT1G Datasheet

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APTM50AM70FT1G

Manufacturer Part Number
APTM50AM70FT1G
Description
MOSFET MODULE PHASE LEG SP1
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTM50AM70FT1G.pdf (5 pages)

Specifications of APTM50AM70FT1G

Fet Type
2 N-Channel (Half Bridge)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
84 mOhm @ 42A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
5V @ 2.5mA
Gate Charge (qg) @ Vgs
340nC @ 10V
Input Capacitance (ciss) @ Vds
10800pF @ 25V
Power - Max
390W
Mounting Type
Chassis Mount
Package / Case
SP1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
APTM50AM70UT1G
APTM50AM70UT1G
Absolute maximum ratings
Symbol
R
MOSFET Power Module
V
V
I
I
P
I
DSon
DM
AR
DSS
D
GS
D
Pins 1/2 ; 3/4 ; 5/6 must be shorted together
10
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
7
8
9
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
APT0502 on www.microsemi.com
Phase leg
Q2
Q1
5
1
2
6
Parameter
3
4
11
12
NTC
www.microsemi.com
Application
Features
Benefits
V
R
I
D
T
T
T
DSS
DSon
•
•
•
•
•
•
•
•
c
c
c
= 50A @ Tc = 25°C
•
•
•
•
•
•
= 25°C
= 80°C
= 25°C
APTM50AM70UT1G
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Power MOS 8™ Ultrafast FREDFETs
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
= 500V
-
-
-
-
-
-
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
RoHS Compliant
-
= 70mΩ typ @ Tj = 25°C
Low R
Low input and Miller capacitance
Low gate charge
Ultrafast intrinsic reverse diode
Avalanche energy rated
Very rugged
Symmetrical design
Max ratings
DSon
500
270
±30
390
50
37
84
42
Unit
mΩ
W
V
A
V
A
1 – 5

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APTM50AM70FT1G Summary of contents

Page 1

Phase leg MOSFET Power Module Pins 1/2 ; 3/4 ; 5/6 must be shorted together Absolute maximum ratings Symbol Parameter V Drain - Source Breakdown Voltage ...

Page 2

All ratings @ T Electrical Characteristics Symbol Characteristic I Zero Gate Voltage Drain Current DSS R Drain – Source on Resistance DS(on) V Gate Threshold Voltage GS(th) I Gate – Source Leakage Current GSS Dynamic Characteristics Symbol Characteristic C Input ...

Page 3

Thermal and package characteristics Symbol Characteristic R Junction to Case Thermal Resistance thJC V RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz ISOL T Operating junction temperature range J T Storage Temperature Range STG T ...

Page 4

Typical Performance Curve Low Voltage Output Characteristics 250 V =10V GS 200 T =25°C J 150 100 Drain to Source Voltage (V) DS Normalized R vs. Temperature DSon 2.5 V =10V GS I ...

Page 5

Drain Current vs Source to Drain Voltage 125 100 T =125° 0.2 0.4 0 Source to Drain Voltage (V) SD Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 ...

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