APTM100H80FT1G Microsemi Power Products Group, APTM100H80FT1G Datasheet
APTM100H80FT1G
Specifications of APTM100H80FT1G
Related parts for APTM100H80FT1G
APTM100H80FT1G Summary of contents
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... Drain - Source ON Resistance DSon P Maximum Power Dissipation D I Avalanche current (repetitive and non repetitive) AR These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTM100H80FT1G V = 1000V DSS R = 800mΩ typ @ Tj = 25°C DSon I = 11A @ Tc = 25°C D Application • ...
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... Diode Forward Voltage SD dv/dt Peak Diode Recovery t Reverse Recovery Time rr Q Reverse Recovery Charge rr dv/dt numbers reflect the limitations of the circuit rather than the device itself. ≤ di/dt ≤ 1000A/µ APTM100H80FT1G = 25°C unless otherwise specified j Test Conditions T = 25° 1000V 125° ...
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... Symbol Characteristic R Resistance @ 25° 298.15 K 25/ ⎡ ⎢ exp B ⎣ SP1 Package outline (dimensions in mm) See application note 1904 - Mounting Instructions for SP1 Power Modules on www.microsemi.com APTM100H80FT1G To heatsink R T: Thermistor temperature 25 ⎤ ⎛ ⎞ Thermistor value ⎜ ⎜ ⎟ ⎟ − ⎥ ⎝ ...
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... D 2 1 100 T , Junction Temperature (°C) J Gate Charge vs Gate to Source 12 V =10V =500V 100 120 140 160 Gate Charge (nC) APTM100H80FT1G =125° 12.5 10 7.5 5 2.5 0 125 150 0 Capacitance vs Drain to Source Voltage 10000 V =200V DS 1000 100 V =800V www.microsemi.com Low Voltage Output Characteristics T =125° ...
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... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTM100H80FT1G T =25° ...