APTC80H15T3G Microsemi Power Products Group, APTC80H15T3G Datasheet - Page 4

• Manufacturer Part Number: APTC80H15T3G
• Description: MOSFET PWR MOD FULL BRIDGE SP3
• Manufacturer: Microsemi Power Products Group

Specifications of APTC80H15T3G

• Fet Type: 4 N-Channel (H-Bridge)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 150 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 28A
• Vgs(th) (max) @ Id: 3.9V @ 2mA
• Gate Charge (qg) @ Vgs: 180nC @ 10V
• Input Capacitance (ciss) @ Vds: 4507pF @ 25V
• Power - Max: 277W
• Mounting Type: Chassis Mount
• Package / Case: SP3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
1.4
1.3
1.2
1.1
0.9
0.8
80
70
60
50
40
30
20
10
0.45
0.35
0.25
0.15
0.05
0
1
0.5
0.4
0.3
0.2
0.1
0.00001
0
0
0
Low Voltage Output Characteristics
Normalized to
V
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
GS
V
V
=10V @ 14A
GS
DS
10
0.5
0.3
0.05
0.7
0.1
0.9
=15&10V
5
, Drain to Source Voltage (V)
R
DS(on)
I
D
, Drain Current (A)
20
vs Drain Current
10
0.0001
30
15
40
V
GS
=10V
V
GS
20
=20V
50
0.001
rectangular Pulse Duration (Seconds)
6.5V
4.5V
5.5V
4V
5V
6V
25
60
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Single Pulse
0.01
100
30
25
20
15
10
80
60
40
20
5
0
0
DC Drain Current vs Case Temperature
25
0
V
250µs pulse test @ < 0.5 duty cycle
0.1
APTC80H15T3G
DS
V
1
GS
> I
T
Transfert Characteristics
50
C
, Gate to Source Voltage (V)
D
, Case Temperature (°C)
(on)xRDS(on)MAX
2
T
J
=125°C
3
75
T
J
=25°C
4
1
100
5
T
J
=-55°C
6
125
7
10
150
8
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