APTC60HM70T1G Microsemi Power Products Group, APTC60HM70T1G Datasheet

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APTC60HM70T1G

Manufacturer Part Number
APTC60HM70T1G
Description
MOSFET PWR MOD BULL BRIDGE SP1
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APTC60HM70T1G

Fet Type
4 N-Channel (H-Bridge)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
70 mOhm @ 39A, 10V
Drain To Source Voltage (vdss)
600V
Current - Continuous Drain (id) @ 25° C
39A
Vgs(th) (max) @ Id
3.9V @ 2.7mA
Gate Charge (qg) @ Vgs
259nC @ 10V
Input Capacitance (ciss) @ Vds
7000pF @ 25V
Power - Max
250W
Mounting Type
Chassis Mount
Package / Case
SP1
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute maximum ratings
Symbol
R
V
V
E
I
E
Super Junction MOSFET
I
P
I
DSon
DM
AR
DSS
AR
AS
D
GS
D
5
7
APT0502 on www.microsemi.com
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Pins 3/4 must be shorted together
These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note
11
Power Module
Full - Bridge
Q1
Q2
8
3
6
NTC
1
4
Parameter
10
Q3
Q4
12
2
9
www.microsemi.com
Application
Features
Benefits
T
T
T
V
R
I
c
c
c
D
= 25°C
= 80°C
= 25°C
DSS
DSon
= 39A @ Tc = 25°C
Welding converters
Switched Mode Power Supplies
Uninterruptible Power Supplies
Motor control
Very low stray inductance
Internal thermistor for temperature monitoring
High level of integration
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Solderable terminals both for power and signal for
easy PCB mounting
Low profile
Each leg can be easily paralleled to achieve a phase
leg of twice the current capability
RoHS Compliant
-
-
-
-
-
-
APTC60HM70T1G
= 600V
Ultra low R
Low Miller capacitance
Ultra low gate charge
Avalanche energy rated
Very rugged
Symmetrical design
= 70mΩ max @ Tj = 25°C
Max ratings
1800
±20
600
160
250
39
29
70
20
1
DSon
Unit
mΩ
mJ
W
V
A
V
A
1 – 6

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APTC60HM70T1G Summary of contents

Page 1

... RoHS Compliant T = 25° 80° 25°C c www.microsemi.com APTC60HM70T1G = 600V = 70mΩ max @ Tj = 25°C Ultra low R DSon Low Miller capacitance Ultra low gate charge Avalanche energy rated Very rugged Symmetrical design Max ratings Unit 600 ...

Page 2

... GS Bus I = 39A 5Ω Test Conditions 39A 39A 350V R di /dt = 100A/µs S ≤ V ≤ 150° DSS j www.microsemi.com APTC60HM70T1G Min Typ Max T = 25° 125°C 250 j 70 2.1 3 3.9 ±100 Min Typ Max 7 2.56 0.21 259 29 111 21 30 283 84 670 ...

Page 3

... T: Thermistor temperature 25     Thermistor value     − B       25 www.microsemi.com APTC60HM70T1G Min Typ Max 0.5 2500 -40 150 -40 125 -40 100 M4 2.5 4.7 80 Min Typ Max 50 3952 Unit °C/W V °C N.m g Unit kΩ ...

Page 4

... I , Drain Current (A) D Single Pulse 0.001 0.01 rectangular Pulse Duration (Seconds) 6.5V 6V 5. =10V GS V =20V www.microsemi.com APTC60HM70T1G 0.1 1 Transfert Characteristics 140 V > I (on)xR (on)MAX 120 250µs pulse test @ < 0.5 duty cycle 100 =125° =25° Gate to Source Voltage (V) ...

Page 5

... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 100000 10000 1000 100 Drain to Source Voltage (V) DS APTC60HM70T1G 3.0 2.5 2.0 1.5 1.0 0.5 0.0 25 125 150 1000 100 limited 125 150 1 V Gate Charge vs Gate to Source Voltage 14 I =39A ...

Page 6

... Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. td(off) td(on off ZVS ZCS www.microsemi.com APTC60HM70T1G Rise and Fall times vs Current 120 V =400V DS 100 R =5Ω =125° L=100µ ...

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