APT10M07JVFR Microsemi Power Products Group, APT10M07JVFR Datasheet - Page 2

• Manufacturer Part Number: APT10M07JVFR
• Description: MOSFET N-CH 100V 225A SOT-227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS V®r

Specifications of APT10M07JVFR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 7 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 225A
• Vgs(th) (max) @ Id: 4V @ 5mA
• Gate Charge (qg) @ Vgs: 1050nC @ 10V
• Input Capacitance (ciss) @ Vds: 21600pF @ 25V
• Power - Max: 700W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

1
2
DYNAMIC CHARACTERISTICS
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
THERMAL / PACKAGE CHARACTERISTICS
Symbol
Symbol
Symbol
V
Repetitive Rating: Pulse width limited by maximum junction
temperature.
Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
APT Reserves the right to change, without notice, the specifications and information contained herein.
Torque
t
t
Isolation
I
R
C
R
C
d
d
V
C
Q
dv
Q
RRM
I
Q
Q
(on)
(off)
SM
t
t
I
t
θJC
θJA
oss
SD
rss
iss
S
rr
gs
gd
/
r
f
g
rr
dt
0.0005
0.005
0.001
0.05
0.01
0.2
0.1
10
Characteristic
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Total Gate Charge
Gate-Source Charge
Gate-Drain ("Miller") Charge
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Characteristic / Test Conditions
Continuous Source Current (Body Diode)
Pulsed Source Current
Diode Forward Voltage
Peak Diode Recovery
Reverse Recovery Time
(I
Reverse Recovery Charge
(I
Peak Recovery Current
(I
Characteristic
Junction to Case
Junction to Ambient
RMS Voltage
Maximum Torque for Device Mounting Screws and Electrical Terminations.
S
S
S
-5
= -I
= -I
= -I
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
D
D
D
D=0.5
[Cont.],
[Cont.],
[Cont.],
0.02
0.01
0.05
0.2
0.1
(50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
10
di
di
di
/
/
/
SINGLE PULSE
-4
dt
dt
dt
3
= 100A/µs)
= 100A/µs)
= 100A/µs)
dv
1
/
2
dt
(Body Diode)
(V
5
GS
RECTANGULAR PULSE DURATION (SECONDS)
10
= 0V, I
-3
S
= -I
D
[Cont.])
I
I
10
D
D
3
4
-2
Test Conditions
= I
= I
V
V
See MIL-STD-750 Method 3471
Starting T
DD
DD
D
D
V
V
V
R
f = 1 MHz
V
[Cont.] @ 25°C
[Cont.] @ 25°C
DS
GS
GS
G
GS
= 0.5 V
= 0.5 V
T
T
T
T
T
T
= 0.6Ω
j
j
j
j
j
j
= 25V
= 10V
= 15V
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 0V
j
= +25°C, L = 142µH, R
DSS
DSS
10
-1
Note:
Peak T J = P DM x Z θJC + T C
2500
MIN
MIN
MIN
Duty Factor D =
1.0
G
t 1
= 25Ω, Peak I
t 2
18000
6800
2800
TYP
TYP
TYP
700
130
300
150
250
0.9
2.5
25
60
80
20
12
20
t 1
/ t 2
APT10M07JVFR
21600
L
9500
4200
1050
MAX
0.18
MAX
MAX
195
435
120
120
225
900
250
500
1.3
40
13
= 225A
50
40
8
10
Amps
Amps
°C/W
UNIT
UNIT
UNIT
Volts
Volts
V/ns
lb•in
pF
nC
µC
ns
ns