APTM50H15FT1G Microsemi Power Products Group, APTM50H15FT1G Datasheet

APTM50H15FT1G

Manufacturer Part Number

APTM50H15FT1G

Description

MOSFET MODULE FULL BRIDGE SP1

Manufacturer

Microsemi Power Products Group

Datasheet

1.APTM50H15FT1G.pdf (5 pages)

Specifications of APTM50H15FT1G

Fet Type

4 N-Channel (H-Bridge)

Fet Feature

Standard

Rds On (max) @ Id, Vgs

180 mOhm @ 21A, 10V

Drain To Source Voltage (vdss)

500V

Current - Continuous Drain (id) @ 25° C

25A

Vgs(th) (max) @ Id

5V @ 1mA

Gate Charge (qg) @ Vgs

170nC @ 10V

Input Capacitance (ciss) @ Vds

5448pF @ 25V

Power - Max

208W

Mounting Type

Chassis Mount

Package / Case

SP1

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

APTM50H15UT1G
APTM50H15UT1G

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Absolute maximum ratings

Symbol

MOSFET Power Module

DSon

DSS

Drain - Source Breakdown Voltage

Continuous Drain Current

Pulsed Drain current

Gate - Source Voltage

Drain - Source ON Resistance

Maximum Power Dissipation

Avalanche current (repetitive and non repetitive)

Pins 3/4 must be shorted together

These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note

APT0502 on www.microsemi.com

Full - Bridge

NTC

Parameter

www.microsemi.com

Application

Features

Benefits

DSS

DSon

•

= 25A @ Tc = 25°C

•

= 25°C

= 80°C

= 25°C

Welding converters

Switched Mode Power Supplies

Uninterruptible Power Supplies

Motor control

Power MOS 8™ Ultrafast FREDFETs

Very low stray inductance

Internal thermistor for temperature monitoring

High level of integration

= 500V

Outstanding performance at high frequency operation

Direct mounting to heatsink (isolated package)

Low junction to case thermal resistance

Solderable terminals both for power and signal for

easy PCB mounting

Low profile

Each leg can be easily paralleled to achieve a phase

leg of twice the current capability

RoHS Compliant

= 150mΩ typ @ Tj = 25°C

APTM50H15UT1G

Low R

Low input and Miller capacitance

Low gate charge

Ultrafast intrinsic reverse diode

Avalanche energy rated

Very rugged

Symmetrical design

Max ratings

DSon

500

135

±30

180

208

Unit

mΩ

1 – 5

Related parts for APTM50H15FT1G

APTM50H15FT1G Summary of contents

Page 1

Full - Bridge MOSFET Power Module NTC 11 Pins 3/4 must be shorted together Absolute maximum ratings Symbol Parameter V Drain - Source Breakdown Voltage DSS I Continuous ...

All ratings @ T Electrical Characteristics Symbol Characteristic I Zero Gate Voltage Drain Current DSS R Drain – Source on Resistance DS(on) V Gate Threshold Voltage GS(th) I Gate – Source Leakage Current GSS Dynamic Characteristics Symbol Characteristic C Input ...

Page 3

Thermal and package characteristics Symbol Characteristic R Junction to Case Thermal Resistance thJC V RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz ISOL T Operating junction temperature range J T Storage Temperature Range STG T ...

Page 4

Typical Performance Curve Low Voltage Output Characteristics 125 V =10V GS 100 T =25° Drain to Source Voltage (V) DS Normalized R vs. Temperature DSon 2.5 V =10V GS I ...

Page 5

Drain Current vs Source to Drain Voltage =125° 0.2 0.4 0 Source to Drain Voltage (V) SD Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration ...

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APTM50H15FT1G datasheet download

APTM50H15FT1G Microsemi Power Products Group, APTM50H15FT1G Datasheet

APTM50H15FT1G

Specifications of APTM50H15FT1G

Related parts for APTM50H15FT1G

APTM50H15FT1G Summary of contents

Page 1

Page 2

Page 3

Page 4

Page 5

Related keywords