APTM100DA40T1G Microsemi Power Products Group, APTM100DA40T1G Datasheet - Page 4

• Manufacturer Part Number: APTM100DA40T1G
• Description: MOSFET N-CH 1000V 20A SP1
• Manufacturer: Microsemi Power Products Group

Specifications of APTM100DA40T1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 480 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 5V @ 2.5mA
• Gate Charge (qg) @ Vgs: 260nC @ 10V
• Input Capacitance (ciss) @ Vds: 6800pF @ 25V
• Power - Max: 357W
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

50
40
30
20
10
2.5
1.5
0.5
0
12
10
8
6
4
2
0
3
2
1
0
0
25
0
V
V
I
V
I
Normalized RDSon vs. Temperature
GS
D
D
Low Voltage Output Characteristics
V
GS
=16A
GS
=16A
Gate Charge vs Gate to Source
DS
=10V
T
=10V
40
=10V
J
, Drain to Source Voltage (V)
, Junction Temperature (°C)
50
5
80
Gate Charge (nC)
75
120 160 200 240 280
V
T
J
DS
10
=25°C
=500V
100
V
DS
=200V
V
T
15
DS
J
=125°C
125
=800V
www.microsemi.com
150
20
100000
APTM100DA40T1G
10000
35
30
25
20
15
10
35
30
25
20
15
10
1000
5
0
5
0
100
10
0
0
1
Capacitance vs Drain to Source Voltage
Low Voltage Output Characteristics
0
T
V
250µs pulse test @ < 0.5
duty cycle
J
V
=125°C
DS
V
V
GS
1
Transfert Characteristics
DS
5
DS
> I
, Gate to Source Voltage (V)
, Drain to Source Voltage (V)
, Drain to Source Voltage (V)
D(on)
V
50
2
GS
xR
10
=6, 7, 8 & 9V
T
DS(on)
J
=25°C
3
MAX
T
J
15
100
=125°C
4
20
5
150
25
6
Ciss
Coss
Crss
5V
4.5V
200
7
30
4 – 5