APTC80H29T3G Microsemi Power Products Group, APTC80H29T3G Datasheet
APTC80H29T3G
Specifications of APTC80H29T3G
Related parts for APTC80H29T3G
APTC80H29T3G Summary of contents
Page 1
... Avalanche current (repetitive and non repetitive Repetitive Avalanche Energy AR E Single Pulse Avalanche Energy AS These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTC80H29T3G V = 800V DSS R = 290mΩ max @ Tj = 25°C DSon I = 15A @ Tc = 25°C D Application • ...
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... D G Test Conditions Tc = 25° 80° 0V 15A 15A T = 25° 400V 25°C di /dt = 100A/µ ≤ V ≤ 150° DSS j www.microsemi.com APTC80H29T3G Min Typ Max Unit 25 µA 250 290 mΩ 2.1 3 3.9 V ±100 nA Min Typ Max Unit 2254 pF 1046 243 µ ...
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... R T: Thermistor temperature 25 Thermistor value − www.microsemi.com APTC80H29T3G Min Typ Max Unit 0.80 °C/W 2500 V -40 150 °C -40 125 -40 100 M4 2.5 4.7 N.m 110 g Min Typ Max Unit 50 kΩ ...
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... Pulse Duration (Seconds 250µs pulse test @ < 0.5 duty cycle Drain Current vs Case Temperature =10V =20V www.microsemi.com APTC80H29T3G 0 Transfert Characteristics > I (on)xRDS(on)MAX =-55° =125° =25° =125° =-55° Gate to Source Voltage ( 100 125 150 T , Case Temperature (° – ...
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... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 10000 Ciss 1000 Coss 100 Crss Drain to Source Voltage (V) DS APTC80H29T3G ON resistance vs Temperature 3.0 V =10V 7.5A 2.5 D 2.0 1.5 1.0 0.5 0.0 -50 0 150 T , Junction Temperature (°C) J Maximum Safe Operating Area 100 ...
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... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTC80H29T3G Rise and Fall times vs Current 50 ...