APTC80H29T1G Microsemi Power Products Group, APTC80H29T1G Datasheet - Page 5

• Manufacturer Part Number: APTC80H29T1G
• Description: MOSFET PWR MOD FULL BRIDGE SP1
• Manufacturer: Microsemi Power Products Group

Specifications of APTC80H29T1G

• Fet Type: 4 N-Channel (H-Bridge)
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 290 mOhm @ 7.5A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 3.9V @ 1mA
• Gate Charge (qg) @ Vgs: 90nC @ 10V
• Input Capacitance (ciss) @ Vds: 2254pF @ 25V
• Power - Max: 156W
• Mounting Type: Chassis Mount
• Package / Case: SP1
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

10000
1000
100
1.15
1.10
1.05
1.00
0.95
0.90
1.1
1.0
0.9
0.8
0.7
10
Capacitance vs Drain to Source Voltage
25
0
25
Threshold Voltage vs Temperature
Breakdown Voltage vs Temperature
V
T
J
DS
, Junction Temperature (°C)
T
, Drain to Source Voltage (V)
10
C
50
50
, Case Temperature (°C)
20
75
75
100
100
30
125
125
40
Crss
Coss
Ciss
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150
150
50
100
16
14
12
10
10
8
6
4
2
0
1
0
Gate Charge vs Gate to Source Voltage
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
1
limited by
R
I
T
Single pulse
T
T
25
D
DSon
J
APTC80H29T1G
=15A
J
C
=25°C
ON resistance vs Temperature
Maximum Safe Operating Area
=150°C
=25°C
V
V
I
D
DS
GS
= 7.5A
T
20
=10V
, Drain to Source Voltage (V)
J
, Junction Temperature (°C)
50
Gate Charge (nC)
10
40
75
V
60
DS
100
100
=400V
V
DS
100ms
125
80
V
=160V
100µs
DS
1ms
=640V
1000
150
100
5 – 6