APT10045JLL Microsemi Power Products Group, APT10045JLL Datasheet - Page 4

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APT10045JLL

Manufacturer Part Number
APT10045JLL
Description
MOSFET N-CH 1000V 21A SOT-227
Manufacturer
Microsemi Power Products Group
Series
POWER MOS 7®r
Datasheet

Specifications of APT10045JLL

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
450 mOhm @ 11.5A, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
21A
Vgs(th) (max) @ Id
5V @ 2.5mA
Gate Charge (qg) @ Vgs
154nC @ 10V
Input Capacitance (ciss) @ Vds
4350pF @ 25V
Power - Max
460W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT10045JLL
Manufacturer:
APT
Quantity:
15 500
Typical Performance Curves
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
2000
1500
1000
160
140
120
100
500
80
60
40
20
83
50
10
16
12
FIGURE 10, MAXIMUM SAFE OPERATING AREA
0
0
FIGURE 16, SWITCHING ENERGY vs CURRENT
1
8
4
0
V
0
1
0
0
DS
FIGURE 14, DELAY TIMES vs CURRENT
V
R
T
L = 100µH
V
R
T
L = 100µH
E
diode reverse recovery.
T C =+25°C
T J =+150°C
SINGLE PULSE
J
DD
G
DD
J
G
ON
LIMITED BY R DS (ON)
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
OPERATION HERE
= 125°C
= 125°C
I
= 5
D
= 5
5
= 670V
= 670V
includes
= 23A
Q
50
g
, TOTAL GATE CHARGE (nC)
10
10
V DS =500V
t
d(on)
10
V DS =200V
E
15
100
off
I
I
D
D
20
20
(A)
(A)
150
25
V DS =800V
100
t
d(off)
E
30
30
on
200
35
1000
250
40
40
10mS
100µS
1mS
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
20,000
10,000
1,000
4000
3500
3000
2500
2000
1500
1000
100
200
100
500
FIGURE 15, RISE AND FALL TIMES vs CURRENT
10
10
60
50
40
30
20
10
1
0
0
0.3
V
V
0
0
0
DS
SD
V
R
T
L = 100µH
J
DD
G
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
= 125°C
5
= 5
T J =+150°C
= 670V
0.5
R
10
10 15 20 25 30
G
, GATE RESISTANCE (Ohms)
10
0.7
20
I
D
T J =+25°C
0.9
20
(A)
30
V
I
T
L = 100µH
E
diode reverse recovery.
D
J
DD
ON
1.1
= 23A
= 125°C
t
f
= 670V
includes
35 40 45 50
t
E
r
30
off
40
1.3
E
C rss
C oss
C iss
on
APT10045JLL
1.5
50
40

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