APT30M30JLL Microsemi Power Products Group, APT30M30JLL Datasheet - Page 4

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APT30M30JLL

Manufacturer Part Number
APT30M30JLL
Description
MOSFET N-CH 300V 88A SOT-227
Manufacturer
Microsemi Power Products Group
Series
POWER MOS 7®r
Datasheet

Specifications of APT30M30JLL

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
30 mOhm @ 44A, 10V
Drain To Source Voltage (vdss)
300V
Current - Continuous Drain (id) @ 25° C
88A
Vgs(th) (max) @ Id
5V @ 2.5mA
Gate Charge (qg) @ Vgs
140nC @ 10V
Input Capacitance (ciss) @ Vds
7030pF @ 25V
Power - Max
520W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT30M30JLL
Manufacturer:
APT
Quantity:
15 500
Part Number:
APT30M30JLL
Manufacturer:
ST
0
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
3500
3000
2500
2000
1500
1000
352
100
120
100
500
10
16
12
80
60
40
20
1
8
4
0
0
0
FIGURE 16, SWITCHING ENERGY vs CURRENT
FIGURE 10, MAXIMUM SAFE OPERATING AREA
40
40
0
1
V
FIGURE 14, DELAY TIMES vs CURRENT
V
R
T
L = 100µH
LIMITED BY R DS (ON)
T C =+25°C
T J =+150°C
SINGLE PULSE
DS
V
R
T
L = 100µH
E
diode reverse recovery.
OPERATION HERE
J
DD
G
DD
J
G
ON
I
= 125°C
= 125°C
D
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
= 5Ω
= 5Ω
= 300V
= 200V
includes
= 88A
60
60
Q
50
g
, TOTAL GATE CHARGE (nC)
V DS =150V
80
80
V DS =60V
100
t
d(off)
10
E
E
on
I
I
off
D
D
100
100
(A)
(A)
t
d(on)
V DS =240V
150
120
120
200
100
140
140
250
160
160
300
100µS
1mS
10mS
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
20,000
10,000
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
1,000
5000
4000
2000
1000
100
300
100
200
180
160
140
120
100
300
FIGURE 15, RISE AND FALL TIMES vs CURRENT
10
10
80
60
40
20
1
0
0
0.3
40
0
0
V
V
V
I
T
L = 100µH
E
diode reverse recovery.
V
R
T
L = 100µH
D
DS
SD
DD
J
J
ON
DD
G
= 88A
= 125°C
= 125°C
5
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
= 5Ω
= 200V
includes
= 200V
T J =+150°C
60
0.5
R
10 15 20 25 30
10
G
, GATE RESISTANCE (Ohms)
0.7
80
20
t
f
I
D
100
0.9
T J =+25°C
(A)
E
off
30
t
r
120
1.1
35 40 45 50
E
on
40
140
1.3
C iss
C oss
C rss
160
1.5
50

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