APT31N80JC3 Microsemi Power Products Group, APT31N80JC3 Datasheet
APT31N80JC3
Manufacturer Part Number
APT31N80JC3
Description
MOSFET N-CH 800V 31A SOT-227
Manufacturer
Microsemi Power Products Group
Series
CoolMOS™r
Datasheet
1.APT31N80JC3.pdf
(5 pages)
Specifications of APT31N80JC3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
145 mOhm @ 22A, 10V
Drain To Source Voltage (vdss)
800V
Current - Continuous Drain (id) @ 25° C
31A
Vgs(th) (max) @ Id
3.9V @ 2mA
Gate Charge (qg) @ Vgs
355nC @ 10V
Input Capacitance (ciss) @ Vds
4510pF @ 25V
Power - Max
833W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
APT31N80JC3
Manufacturer:
APT
Quantity:
15 500
Part Number:
APT31N80JC3
Quantity:
163
Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with
two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
STATIC ELECTRICAL CHARACTERISTICS
MAXIMUM RATINGS
"COOLMOS
mark of Infineon Technologies AG"
• Ultra low R
• Ultra Low Gate Charge, Q
• Popular SOT-227 Package
C
Symbol
Symbol
T
R
Power Semiconductors
V
BV
V
V
J
V
dv
I
I
E
E
DS(on)
GS(th)
,T
O
I
I
DSS
GSS
GSM
P
DM
T
DSS
AR
I
GS
AR
D
AS
DSS
/
D
STG
L
dt
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
O
LMOS
Parameter
Drain-Source Voltage
Continuous Drain Current @ T
Pulsed Drain Current
Gate-Source Voltage Continuous
Gate-Source Voltage Transient
Total Power Dissipation @ T
Linear Derating Factor
Operating and Storage Junction Temperature Range
Lead Temperature: 0.063" from Case for 10 Sec.
Drain-Source Voltage slope (V
Repetitive Avalanche Current
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Characteristic / Test Conditions
Drain-Source Breakdown Voltage (V
Drain-Source On-State Resistance
Zero Gate Voltage Drain Current (V
Zero Gate Voltage Drain Current (V
Gate-Source Leakage Current (V
Gate Threshold Voltage (V
™
comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trade-
DS
(
ON
)
Super Junction MOSFET
1
g
DS
Microsemi Website - http://www.microsemi.com
C
= V
DS
C
= 25°C
7
7
• Low Miller Capacitance
• Avalanche Energy Rated
• N-Channel Enhancement Mode
= 25°C
4
GS
= 640V, I
GS
2
, I
DS
DS
= ±20V, V
GS
D
(V
= 800V, V
= 800V, V
= 2mA)
= 0V, I
GS
D
= 10V, I
= 31A, T
DS
D
= 500µA)
GS
GS
= 0V)
= 0V)
= 0V, T
D
J
= 22A)
= 125°C)
All Ratings: T
J
= 150°C)
APT31N80JC3
C
800V 31A 0.145
= 25°C unless otherwise specified.
2.10
MIN
800
APT31N80JC3
-55 to 150
0.125
6.67
TYP
800
±20
±30
833
300
670
0.5
0.5
31
93
50
17
3
ISOTOP
0.145
±200
MAX
250
3.9
®
25
G
"UL Recognized"
Amps
Amps
Ohms
Watts
UNIT
W/°C
UNIT
Volts
Volts
Volts
Volts
V/ns
mJ
µA
nA
°C
Ω Ω Ω Ω Ω
D
S
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APT31N80JC3 Summary of contents
Page 1
... T = 150° ±20V 0V 2mA Microsemi Website - http://www.microsemi.com APT31N80JC3 800V 31A 0.145 "UL Recognized" ISOTOP ® 25°C unless otherwise specified. C APT31N80JC3 UNIT 800 Volts 31 Amps 93 ±20 Volts ±30 833 Watts 6.67 W/°C -55 to 150 °C 300 50 V/ns 17 Amps 0.5 mJ 670 ...
Page 2
... Starting T = +25° 115.92mH 31A Eon includes diode reverse recovery. See figures 18, 20. 7 Repetitve avalanche causes additional power losses that can be calculated as P SINGLE PULSE - RECTANGULAR PULSE DURATION (SECONDS) APT31N80JC3 MIN TYP MAX 4510 2050 110 180 355 615 = 15V GS 530 = 5Ω ...
Page 3
0.144 0.226 Dissipated Power (Watts) 0.00671 0.141 Z are the external thermal EXT impedances: Case to sink, sink to ambient, etc. Set to zero when modeling only the case to junction. FIGURE 2, TRANSIENT THERMAL IMPEDANCE ...
Page 4
Graph removed V , DRAIN-TO-SOURCE VOLTAGE (VOLTS) DS FIGURE 10, MAXIMUM SAFE OPERATING AREA 31A 160V 400V 640V 100 150 200 ...
Page 5
... Source 15.1 (.594) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) * Source Dimensions in Millimeters and (Inches) APT31N80JC3 90% Gate Voltage t d(off) 90% Drain Voltage t f 10% 0 Drain Current Switching Energy 11.8 (.463) 12 ...