APT20M22JVRU3 Microsemi Power Products Group, APT20M22JVRU3 Datasheet

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APT20M22JVRU3

Manufacturer Part Number
APT20M22JVRU3
Description
MOSFET N-CH 200V 97A SOT-227
Manufacturer
Microsemi Power Products Group
Datasheet

Specifications of APT20M22JVRU3

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
22 mOhm @ 48.5A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
97A
Vgs(th) (max) @ Id
4V @ 2.5mA
Gate Charge (qg) @ Vgs
290nC @ 10V
Input Capacitance (ciss) @ Vds
8500pF @ 25V
Power - Max
450W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Absolute maximum ratings
Symbol
IF
R
V
IF
V
E
E
I
I
P
MOSFET Power Module
DSon
I
DM
AR
RMS
DSS
ISOTOP
AR
AS
D
GS
A V
D
Drain - Source Breakdown Voltage
Continuous Drain Current
Pulsed Drain current
Gate - Source Voltage
Drain - Source ON Resistance
Maximum Power Dissipation
Avalanche current (repetitive and non repetitive)
Repetitive Avalanche Energy
Single Pulse Avalanche Energy
Maximum Average Forward Current
RMS Forward Current (Square wave, 50% duty)
G
G
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
ISOTOP
S
®
Buck chopper
D
D
A
Parameter
A
S
www.microsemi.com
Duty cycle=0.5
Application
Features
Benefits
V
R
I
D
DSS
DSon
= 97A @ Tc = 25°C
AC and DC motor control
Switched Mode Power Supplies
Power MOS V
ISOTOP
Very low stray inductance
High level of integration
Outstanding performance at high frequency operation
Direct mounting to heatsink (isolated package)
Low junction to case thermal resistance
Very rugged
Low profile
RoHS Compliant
= 200V
= 22mΩ max @ Tj = 25°C
-
-
-
-
-
-
T
T
T
Tc = 90°C
APT20M22JVRU3
c
c
c
= 25°C
= 80°C
= 25°C
®
Low R
Low input and Miller capacitance
Low gate charge
Fast intrinsic diode
Avalanche energy rated
Very rugged
Package (SOT-227)
®
DSon
MOSFETs
Max ratings
2500
±30
200
388
450
97
72
22
97
50
30
47
Unit
mΩ
mJ
W
V
A
V
A
A
1 – 7

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APT20M22JVRU3 Summary of contents

Page 1

... AR E Single Pulse Avalanche Energy AS IF Maximum Average Forward Current RMS Forward Current (Square wave, 50% duty) RMS These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT20M22JVRU3 V = 200V DSS R = 22mΩ max @ Tj = 25°C DSon I = 97A @ Tc = 25°C D Application • ...

Page 2

... Reverse Recovery Time I Maximum Reverse Recovery Current RRM Q Reverse Recovery Charge rr t Reverse Recovery Time rr Q Reverse Recovery Charge rr I Maximum Reverse Recovery Current RRM APT20M22JVRU3 = 25°C unless otherwise specified j Test Conditions T = 25° 0V,V = 200V 125° 0V,V = 160V j ...

Page 3

... Storage Temperature Range J STG T Max Lead Temp for Soldering:0.063” from case for 10 sec L Torque Mounting torque (Mounting = 8-32 or 4mm Machine and terminals = 4mm Machine) Wt Package Weight Typical Performance Curve MOSFET APT20M22JVRU3 Min MOSFET Diode 2500 www.microsemi.com Typ Max Unit 0.28 °C/W 1. ...

Page 4

... APT20M22JVRU3 www.microsemi.com 4 – 7 ...

Page 5

... Typical Diode Performance Curve APT20M22JVRU3 www.microsemi.com 5 – 7 ...

Page 6

... APT20M22JVRU3 www.microsemi.com 6 – 7 ...

Page 7

... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT20M22JVRU3 W=4.1 (.161) W=4.3 (.169) H=4 ...

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