APT50M75JFLL Microsemi Power Products Group, APT50M75JFLL Datasheet - Page 4

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APT50M75JFLL

Manufacturer Part Number
APT50M75JFLL
Description
MOSFET N-CH 500V 51A SOT-227
Manufacturer
Microsemi Power Products Group
Series
POWER MOS 7®r
Datasheet

Specifications of APT50M75JFLL

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
75 mOhm @ 25.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
51A
Vgs(th) (max) @ Id
5V @ 2.5mA
Gate Charge (qg) @ Vgs
125nC @ 10V
Input Capacitance (ciss) @ Vds
5590pF @ 25V
Power - Max
460W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APT50M75JFLL
Manufacturer:
TOSHIBA
Quantity:
30 000
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
2500
2000
1500
1000
100
500
204
100
10
16
12
90
80
70
60
50
40
30
20
10
1
0
FIGURE 16, SWITCHING ENERGY vs CURRENT
1
8
4
0
FIGURE 10, MAXIMUM SAFE OPERATING AREA
10
10
1
0
V
T C =+25°C
T J =+150°C
SINGLE PULSE
V
R
T
L = 100µH
FIGURE 14, DELAY TIMES vs CURRENT
V
R
T
L = 100µH
E
diode reverse recovery
DS
LIMITED BY R DS (ON)
J
DD
G
DD
J
ON
G
OPERATION HERE
I
D
= 125°C
= 125°C
= 5Ω
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
= 5Ω
20
20
= 333V
= 333V
includes
= 51A
Q
40
g
, TOTAL GATE CHARGE (nC)
30
30
10
40
40
80
t
d(off)
E
V DS =250V
off
I
I
D
D
50
50
(A)
(A)
V DS =100V
120
60
60
t
d(on)
E
V DS =400V
on
100
70
70
160
80
80
200
500
90
90
10mS
100µS
1mS
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
20,000
10,000
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
1,000
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
3000
2500
2000
1500
1000
100
200
100
120
110
100
500
FIGURE 15, RISE AND FALL TIMES vs CURRENT
10
10
90
80
70
60
50
40
30
20
10
1
0
0.3
10
0
0
V
V
V
R
T
L = 100µH
V
I
T
L = 100µH
E
diode reverse recovery
DS
SD
D
DD
G
J
J
DD
ON
T J =+150°C
= 125°C
= 51A
= 125°C
= 5Ω
5
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
20
= 333V
= 333V
includes
R
10
10 15 20 25 30
G
0.6
, GATE RESISTANCE (Ohms)
30
40
20
I
T J =+25°C
D
0.9
50
(A)
E
on
30
t
f
60
E
off
t
r
35 40 45 50
1.2
70
40
80
C iss
C oss
C rss
1.5
50
90

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