APT21M100J Microsemi Power Products Group, APT21M100J Datasheet - Page 4

• Manufacturer Part Number: APT21M100J
• Description: MOSFET N-CH 1000V 21A SOT-227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 8™r

Specifications of APT21M100J

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 400 mOhm @ 16A, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 21A
• Vgs(th) (max) @ Id: 5V @ 2.5mA
• Gate Charge (qg) @ Vgs: 260nC @ 10V
• Input Capacitance (ciss) @ Vds: 8500pF @ 25V
• Power - Max: 462W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ISOTOP
5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
®
is a registered trademark of ST Microelectronics NV. Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234
I
DM
Dissipated Power
R ds(on)
D = 0.9
0.7
0.3
0.1
0.5
0.05
r = 4.0 (.157)
(Watts)
13µs
(2 places)
100µs
1ms
10ms
100ms
DC line
T
SOT-227 (ISOTOP
J
31.5 (1.240)
31.7 (1.248)
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
(°C)
7.8 (.307)
8.2 (.322)
0.00119
0.0260
Dimensions in Millimeters and (Inches)
SINGLE PULSE
0.0354
0.0584
3.3 (.129)
3.6 (.143)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
®
(4 places)
4.0 (.157)
4.2 (.165)
(2 places)
) Package Outline
* Source
* Source
0.463
0.185
T
C
(°C)
1.95 (.077)
2.14 (.084)
Scaling for Different Case & Junction
Temperatures:
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
I
D
0.75 (.030)
0.85 (.033)
I
=
DM
Drain
Gate
I
D(T
Hex Nut M4
*
Z
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
(4 places)
Emitter terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
C
EXT
= 25
R ds(on)
Note:
are the external thermal
Peak T J = P DM x Z θJC + T C
12.6 (.496)
12.8 (.504)
°
13µs
C)
100µs
Duty Factor D =
*(
t
1
T
10ms
= Pulse Duration
J
100ms
-
t 1
T
25.2 (0.992)
25.4 (1.000)
C
)/125
t 2
t 1
/
t 2