APT5010JFLL Microsemi Power Products Group, APT5010JFLL Datasheet - Page 3

• Manufacturer Part Number: APT5010JFLL
• Description: MOSFET N-CH 500V 41A SOT-227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 7®r

Specifications of APT5010JFLL

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 100 mOhm @ 20.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 41A
• Vgs(th) (max) @ Id: 5V @ 2.5mA
• Gate Charge (qg) @ Vgs: 95nC @ 10V
• Input Capacitance (ciss) @ Vds: 4360pF @ 25V
• Power - Max: 378W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Case temperature. (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
100
2.5
2.0
1.5
1.0
0.5
0.0
90
80
70
60
50
40
30
20
10
45
40
35
30
25
20
15
10
0
5
0
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
-50
25
0
V
V DS > I D (ON) x R DS (ON)MAX.
FIGURE 4, TRANSFER CHARACTERISTICS
GS
Junction
temp. (°C)
1
@ <0.5 % DUTY CYCLE
V
250µSEC. PULSE TEST
I
-25
D
, GATE-TO-SOURCE VOLTAGE (VOLTS)
GS
T
= 20.5A
J
(watts)
Power
T J = +125°C
T
, JUNCTION TEMPERATURE (°C)
50
= 10V
2
C
T J = +25°C
, CASE TEMPERATURE (°C)
0
3
25
75
4
50
5
RC MODEL
100
6
75
0.0988
0.230
7
T J = -55°C
100 125 150
125
8
9
150
10
0.0196F
0.381F
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.15
1.10
1.05
1.00
0.95
0.90
1.15
1.10
1.05
1.00
0.95
0.90
0.85
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
120
100
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
1.2
1.2
1.1
1.0
0.9
0.8
0.7
0.6
80
60
40
20
0
-50
-50
0
0
V
DS
V
FIGURE 5, R
GS
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
-25
-25
T
NORMALIZED TO
I
= 10V @ I
J
D
5
, JUNCTION TEMPERATURE (°C)
T
, DRAIN CURRENT (AMPERES)
C
15 &10V
20
, CASE TEMPERATURE (°C)
0
0
V GS =10V
10
D
DS
25
= 20.5A
25
(ON) vs DRAIN CURRENT
15
40
50
50
75
75 100 125 150
8V
7.5V
20
V GS =20V
100 125 150
7V
60
6.5V
25
6V
5.5V
30
80