APT19M120J Microsemi Power Products Group, APT19M120J Datasheet - Page 4

• Manufacturer Part Number: APT19M120J
• Description: MOSFET N-CH 1200V 19A SOT-227
• Manufacturer: Microsemi Power Products Group
• Series: POWER MOS 8™r

Specifications of APT19M120J

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 560 mOhm @ 14A, 10V
• Drain To Source Voltage (vdss): 1200V (1.2kV)
• Current - Continuous Drain (id) @ 25° C: 19A
• Vgs(th) (max) @ Id: 5V @ 2.5mA
• Gate Charge (qg) @ Vgs: 300nC @ 10V
• Input Capacitance (ciss) @ Vds: 9670pF @ 25V
• Power - Max: 545W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

ISOTOP
5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
®
is a registered trademark of ST Microelectronics NV. Microsemi's products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234
I
DM
D = 0.9
Dissipated Power
R ds(on)
0.7
0.3
0.1
0.5
0.05
r = 4.0 (.157)
13µs
(Watts)
(2 places)
100µs
1ms
10ms
100ms
DC line
SOT-227 (ISOTOP
T
31.5 (1.240)
31.7 (1.248)
14.9 (.587)
15.1 (.594)
30.1 (1.185)
30.3 (1.193)
38.0 (1.496)
38.2 (1.504)
J
(°C)
7.8 (.307)
8.2 (.322)
0.0213
0.0506
Dimensions in Millimeters and (Inches)
SINGLE PULSE
0.180
0.0624
3.3 (.129)
3.6 (.143)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
®
(4 places)
4.0 (.157)
4.2 (.165)
(2 places)
) Package Outline
* Source
* Source
0.511
0.118
T
C
(°C)
1.95 (.077)
2.14 (.084)
Scaling for Different Case & Junction
Temperatures:
R ds(on)
11.8 (.463)
12.2 (.480)
8.9 (.350)
9.6 (.378)
I
D
0.75 (.030)
0.85 (.033)
=
I
DM
Drain
Gate
I
D(T
Hex Nut M4
*
(4 places)
Emitter terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
Z
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
C
EXT
= 25
Note:
are the external thermal
Peak T J = P DM x Z θJC + T C
12.6 (.496)
12.8 (.504)
°
C)
100ms
Duty Factor D =
*(
t
1
T
= Pulse Duration
J
13µs
100µs
-
t 1
T
25.2 (0.992)
25.4 (1.000)
C
10ms
)/125
t 2
t 1
/
t 2