APTM50HM35FG Microsemi Power Products Group, APTM50HM35FG Datasheet
APTM50HM35FG
Specifications of APTM50HM35FG
Related parts for APTM50HM35FG
APTM50HM35FG Summary of contents
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... Avalanche current (repetitive and non repetitive Repetitive Avalanche Energy AR E Single Pulse Avalanche Energy AS These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTM50HM35FG V = 500V DSS R = 35mΩ typ @ Tj = 25°C DSon I = 99A @ Tc = 25°C D Application • ...
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... 99A 25° 99A 125° 333V 25°C di /dt = 200A/µ 125°C j ≤ V ≤ 150° DSS j www.microsemi.com APTM50HM35FG Min Typ Max Unit 200 µA 1000 35 39 mΩ ±150 nA Min Typ Max Unit 14 nF 2.8 0.2 280 nC 80 140 2070 µ ...
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... J T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTM50HM35FG To heatsink M6 For terminals M5 www.microsemi.com Min Typ Max Unit 0.16 °C/W 2500 V ...
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... DC Drain Current vs Case Temperature 100 =10V =20V 100 120 25 www.microsemi.com APTM50HM35FG 0 Transfert Characteristics V > I (on)xR (on)MAX 250µs pulse test @ < 0.5 duty cycle T =25° =125° =-55° Gate to Source Voltage ( 100 125 150 T , Case Temperature (° – ...
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... T , Case Temperature (°C) C Capacitance vs Drain to Source Voltage 100000 Ciss 10000 Coss 1000 Crss 100 Drain to Source Voltage (V) DS www.microsemi.com APTM50HM35FG ON resistance vs Temperature 2.5 V =10V GS I =49.5A 2.0 D 1.5 1.0 0.5 0.0 -50 - Junction Temperature (°C) J Maximum Safe Operating Area 1000 ...
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... Source to Drain Diode Forward Voltage 1000 V =333V DS D=50% R =1Ω G 100 T =125° =75° 0.2 0.4 0.6 0 www.microsemi.com APTM50HM35FG Rise and Fall times vs Current =333V DS t =1Ω =125° 100 120 140 160 I , Drain Current ( =333V =99A off D T =125°C J L=100µ ...