APTM20DAM05G Microsemi Power Products Group, APTM20DAM05G Datasheet - Page 4

• Manufacturer Part Number: APTM20DAM05G
• Description: MOSFET MOD BOOST CHOP 200V SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTM20DAM05G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6 mOhm @ 158.5A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 317A
• Vgs(th) (max) @ Id: 5V @ 10mA
• Gate Charge (qg) @ Vgs: 448nC @ 10V
• Input Capacitance (ciss) @ Vds: 27400pF @ 25V
• Power - Max: 1136W
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
1000
1.15
1.05
0.95
0.12
0.08
0.06
0.04
0.02
1.2
1.1
0.9
800
600
400
200
0.1
0.00001
1
0
0
0
0
Normalized to
V
Low Voltage Output Characteristics
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
GS
V
0.7
0.9
0.3
0.05
=10V @ 158.5A
0.5
0.1
DS
, Drain to Source Voltage (V)
R
100
5
DS
I
(on) vs Drain Current
D
V
, Drain Current (A)
GS
0.0001
=15&10V
10
200
15
300
9V
V
20
7.5V
GS
V
0.001
rectangular Pulse Duration (Seconds)
GS
=10V
400
www.microsemi.com
=20V
7V
5.5V
6.5V
6V
25
0.01
800
600
400
200
320
280
240
200
160
120
Single Pulse
80
40
0
0
DC Drain Current vs Case Temperature
25
2
V
250µs pulse test @ < 0.5 duty cycle
APTM20DAM05G
DS
0.1
> I
3
V
GS
T
50
D
Transfert Characteristics
(on)xR
T
C
, Gate to Source Voltage (V)
J
, Case Temperature (°C)
=125°C
4
DS
T
J
75
(on)MAX
=25°C
5
1
6
100
T
J
7
=-55°C
125
8
10
150
9
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