APTM50AM35FTG Microsemi Power Products Group, APTM50AM35FTG Datasheet - Page 4
![no-image](/images/manufacturer_photos/0/4/447/microsemi_power_products_group_sml.jpg)
APTM50AM35FTG
Manufacturer Part Number
APTM50AM35FTG
Description
MOSFET MOD PHASE LEG 500V SP4
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTM50AM35FTG.pdf
(6 pages)
Specifications of APTM50AM35FTG
Fet Type
2 N-Channel (Half Bridge)
Fet Feature
Standard
Rds On (max) @ Id, Vgs
39 mOhm @ 49.5A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
99A
Vgs(th) (max) @ Id
5V @ 5mA
Gate Charge (qg) @ Vgs
280nC @ 10V
Input Capacitance (ciss) @ Vds
14000pF @ 25V
Power - Max
781W
Mounting Type
Chassis Mount
Package / Case
SP4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Typical Performance Curve
1.05
0.95
400
300
200
100
0.18
0.16
0.14
0.12
0.08
0.06
0.04
0.02
1.1
0.9
0.1
0.00001
1
0
0
0
0
Normalized to
V
Low Voltage Output Characteristics
0.05
V
GS
0.9
0.7
V
0.3
0.5
0.1
GS
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
=10V @ 49.5A
DS
20
=10&15V
R
, Drain to Source Voltage (V)
5
DS
I
D
(on) vs Drain Current
, Drain Current (A)
40
0.0001
10
60
15
V
V
GS
80
8V
5.5V
GS
=10V
=20V
20
100
0.001
rectangular Pulse Duration (Seconds)
7V
6.5V
6V
5V
120
Single Pulse
25
www.microsemi.com
0.01
300
250
200
150
100
50
100
APTM50AM35FTG
0
90
80
70
60
50
40
30
20
10
DC Drain Current vs Case Temperature
0
0
25
V
250µs pulse test @ < 0.5 duty cycle
0.1
DS
V
GS
Transfert Characteristics
> I
, Gate to Source Voltage (V)
T
D
50
C
(on)xR
, Case Temperature (°C)
2
T
J
DS
=125°C
75
(on)MAX
T
J
=25°C
4
1
100
6
T
125
J
=-55°C
10
150
8
4 – 6