APL1001J Microsemi Power Products Group, APL1001J Datasheet - Page 3

• Manufacturer Part Number: APL1001J
• Description: MOSFET N-CH 1000V 18A SOT-227
• Manufacturer: Microsemi Power Products Group

Specifications of APL1001J

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 600 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 1000V (1kV)
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 4V @ 2.5mA
• Input Capacitance (ciss) @ Vds: 7200pF @ 25V
• Power - Max: 520W
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Other names: APL1001JMI; APL1001JMI

FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
100
2.5
2.0
1.5
1.0
0.5
0.0
15
10
20
15
10
10
20
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
.1
5
0
5
0
1
-50
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 10, MAXIMUM SAFE OPERATING AREA
25
0
1
V
V
V DS > I D (ON) x R DS (ON)MAX.
I
LIMITED BY R DS (ON)
DS
D
T C =+25°C
T J =+150°C
SINGLE PULSE
GS
OPERATION HERE
= 0.5 I
V
-25
250µSEC. PULSE TEST
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
@ <0.5 % DUTY CYCLE
, GATE-TO-SOURCE VOLTAGE (VOLTS)
GS
T
T J = +125°C
J
50
T
, JUNCTION TEMPERATURE (°C)
T J = +25°C
= 10V
D
C
, CASE TEMPERATURE (°C)
[Cont.]
2
0
10
T J = -55°C
25
75
50
4
100
75
100
T J = -55°C
100 125 150
6
125
1000
150
8
100µS
1mS
10mS
100mS
DC
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
20,000
10,000
5,000
1,000
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
0.85
500
100
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
1.1
1.0
0.9
0.8
0.7
0.6
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
-50 -25
-50
.01
0
V
DS
FIGURE 5, R
V
-25
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
GS
T
I
J
D
, JUNCTION TEMPERATURE (°C)
T
NORMALIZED TO
= 10V @ 0.5 I
, DRAIN CURRENT (AMPERES)
C
10
, CASE TEMPERATURE (°C)
0
0
.1
DS
25
25
V GS =10V
(ON) vs DRAIN CURRENT
D
[Cont.]
20
50
50
1
75
75
V GS =20V
100 125 150
100 125 150
30
10
C iss
C oss
C rss
40
50