APL1001J Microsemi Power Products Group, APL1001J Datasheet - Page 3
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APL1001J
Manufacturer Part Number
APL1001J
Description
MOSFET N-CH 1000V 18A SOT-227
Manufacturer
Microsemi Power Products Group
Datasheet
1.APL1001J.pdf
(4 pages)
Specifications of APL1001J
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
600 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
1000V (1kV)
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
4V @ 2.5mA
Input Capacitance (ciss) @ Vds
7200pF @ 25V
Power - Max
520W
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Other names
APL1001JMI
APL1001JMI
APL1001JMI
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
100
2.5
2.0
1.5
1.0
0.5
0.0
15
10
20
15
10
10
20
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
.1
5
0
5
0
1
-50
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
FIGURE 10, MAXIMUM SAFE OPERATING AREA
25
0
1
V
V
V DS > I D (ON) x R DS (ON)MAX.
I
LIMITED BY R DS (ON)
DS
D
T C =+25°C
T J =+150°C
SINGLE PULSE
GS
OPERATION HERE
= 0.5 I
V
-25
250µSEC. PULSE TEST
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
@ <0.5 % DUTY CYCLE
, GATE-TO-SOURCE VOLTAGE (VOLTS)
GS
T
T J = +125°C
J
50
T
, JUNCTION TEMPERATURE (°C)
T J = +25°C
= 10V
D
C
, CASE TEMPERATURE (°C)
[Cont.]
2
0
10
T J = -55°C
25
75
50
4
100
75
100
T J = -55°C
100 125 150
6
125
1000
150
8
100µS
1mS
10mS
100mS
DC
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
20,000
10,000
5,000
1,000
1.30
1.20
1.10
1.00
0.90
0.80
1.15
1.10
1.05
1.00
0.95
0.90
0.85
500
100
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
1.1
1.0
0.9
0.8
0.7
0.6
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
-50 -25
-50
.01
0
V
DS
FIGURE 5, R
V
-25
, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
GS
T
I
J
D
, JUNCTION TEMPERATURE (°C)
T
NORMALIZED TO
= 10V @ 0.5 I
, DRAIN CURRENT (AMPERES)
C
10
, CASE TEMPERATURE (°C)
0
0
.1
DS
25
25
V GS =10V
(ON) vs DRAIN CURRENT
D
[Cont.]
20
50
50
1
75
75
V GS =20V
100 125 150
100 125 150
30
10
C iss
C oss
C rss
40
50