APTGT75DH60TG Microsemi Power Products Group, APTGT75DH60TG Datasheet - Page 4

• Manufacturer Part Number: APTGT75DH60TG
• Description: IGBT MOD TRENCH ASYM BRIDGE SP4
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT75DH60TG

• Igbt Type: Trench and Field Stop
• Configuration: Asymmetrical Bridge
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.9V @ 15V, 75A
• Current - Collector (ic) (max): 100A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 4.62nF @ 25V
• Power - Max: 250W
• Input: Standard
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: SP4
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Typical Performance Curve
150
125
100
150
125
100
5
4
3
2
1
0
0.7
0.6
0.5
0.4
0.3
0.2
0.1
Switching Energy Losses vs Gate Resistance
75
50
25
75
50
25
0.00001
0
0
0
0
0
5
V
V
I
T
C
CE
GE
J
= 75A
= 150°C
0.9
0.5
0.7
0.3
0.1
= 300V
5
Output Characteristics (V
=15V
0.05
0.5
T
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
6
Transfert Characteristics
J
=125°C
Gate Resistance (ohms)
10
T
Eon
T
J
7
=125°C
J
=150°C
T
1
15
J
0.0001
=25°C
V
8
V
T
CE
20
T
1.5
J
GE
=25°C
J
=25°C
(V)
(V)
T
9
25
J
=25°C
Eoff
2
Eon
10
GE
30
Er
T
J
=15V)
=150°C
0.001
Rectangular Pulse Duration in Seconds
2.5
11
35
www.microsemi.com
Single Pulse
40
12
3
0.01
IGBT
175
150
125
100
150
125
100
5
4
3
2
1
0
75
50
25
75
50
25
0
0
0
APTGT75DH60TG
0
0
V
V
R
T
CE
GE
G
J
V
T
R
T
Energy losses vs Collector Current
= 150°C
Reverse Bias Safe Operating Area
= 4.7Ω
J
GE
J
= 300V
G
= 15V
0.1
=150°C
100
25
=4.7Ω
= 150°C
0.5
=15V
200
1
50
Output Characteristics
300
V
1.5
I
C
GE
V
V
75
(A)
=19V
CE
CE
400 500 600
1
(V)
(V)
2
100
V
GE
2.5
Eoff
=15V
V
GE
125
V
=13V
GE
Eon
Er
3
=9V
10
150
700
3.5
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