APT50GT120JRDQ2 Microsemi Power Products Group, APT50GT120JRDQ2 Datasheet - Page 5

• Manufacturer Part Number: APT50GT120JRDQ2
• Description: IGBT 1200V 72A 379W SOT227
• Manufacturer: Microsemi Power Products Group
• Series: Thunderbolt IGBT®r

Specifications of APT50GT120JRDQ2

• Igbt Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3.7V @ 15V, 50A
• Current - Collector (ic) (max): 72A
• Current - Collector Cutoff (max): 400µA
• Input Capacitance (cies) @ Vce: 2.5nF @ 25V
• Power - Max: 379W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: ISOTOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Case temperature. (°C)
TYPICAL PERFORMANCE CURVES
FIGURE 19b, TRANSIENT THERMAL IMPEDANCE MODEL
Junction
temp. (°C)
Figure 17, Capacitance vs Collector-To-Emitter Voltage
4,000
1,000
0.35
0.30
0.25
0.20
0.15
0.10
0.05
500
100
V
(watts)
Power
CE
0
10
0
, COLLECTOR-TO-EMITTER VOLTAGE (VOLTS)
-5
D = 0.9
10
0.5
0.05
0.7
0.3
0.1
Figure 19a, Maximum Effective Transient Thermal Impedance, Junction-To-Case vs Pulse Duration
RC MODEL
20
10
0.0836
0.174
0.0732
-4
30
40
RECTANGULAR PULSE DURATION (SECONDS)
0.0144
0.252
2.87
C
C
C
ies
oes
res
10
-3
50
SINGLE PULSE
10
-2
Figure 20, Operating Frequency vs Collector Current
70
10
5
1
10 20
T
T
D = 50 %
V
R
J
C
CE
G
= 125
= 75
= 1.0Ω
160
140
120
100
= 800V
Figure 18,Minimim Switching Safe Operating Area
80
60
40
20
0
°
I
°
C
C
0
C
30
V
, COLLECTOR CURRENT (A)
10
CE
200
-1
, COLLECTOR TO EMITTER VOLTAGE
40
50
400
60
Note:
Peak T J = P DM x Z θJC + T C
600
70
Duty Factor D =
1.0
800 1000 1200 1400
t 1
80
t 2
90 100
APT50GT120JRDQ2
t 1
/
t 2
F
f
f
P
max1
max2
max
diss
10
= min (f
=
=
=
t
T
d(on)
P
E
R
J
diss
on2
θJC
- T
max
+ t
- P
+ E
C
0.05
r
cond
, f
+ t
off
max2
d(off)
)
+ t
f