GA200SA60U Vishay, GA200SA60U Datasheet - Page 4

IGBT UFAST 600V 100A SOT227

GA200SA60U

Manufacturer Part Number
GA200SA60U
Description
IGBT UFAST 600V 100A SOT227
Manufacturer
Vishay
Datasheets

Specifications of GA200SA60U

Configuration
Single
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.9V @ 15V, 100A
Current - Collector (ic) (max)
200A
Current - Collector Cutoff (max)
1mA
Input Capacitance (cies) @ Vce
16.5nF @ 30V
Power - Max
500W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Igbt Type
-
Lead Free Status / Rohs Status
Not Compliant
Other names
*GA200SA60U
VS-GA200SA60U
VS-GA200SA60U
VSGA200SA60U
VSGA200SA60U

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Fig. 7 - Typical Capacitance vs. Collector to Emitter Voltage
5000
Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage
0
20
16
12
8
4
0
1
0
V
V
I
C
CE
C
C
0.001
CC
res
0.01
ies
= 110 A
0.1
- Collector to Emitter Voltage (V)
0.00001
= 400 V
1
C
Q
oes
G
200
D = 0.02
- Total Gate Charge (nC)
D = 0.10
D = 0.50
D = 0.01
D = 0.20
D = 0.05
V
C
C
C
GE
ies
res
oes
10
= 0 V, f = 1 MHz
= C
= C
= C
400
Fig. 6 - Maximum Effektive Transient Thermal Impedance, Junction to Case
ge
gc
ce
+ C
+ C
For technical questions, contact:
0.0001
gc
gc
(thermal resistance)
, C
600
Single pulse
ce
shorted
Insulated Gate Bipolar Transistor
(Ultrafast Speed IGBT), 100 A
100
t
800
1
- Rectangular Pulse Duration (s)
0.001
indmodules@vishay.com
0.01
Fig. 9 - Typical Switching Losses vs. Gate Resistance
100
10
60
50
40
30
20
10
0
1
- 60 - 40 - 20 0
0
V
V
T
I
C
Fig. 10 - Typical Switching Losses vs.
J
CC
GE
= 200 A
Notes:
1. Duty factor D = t
2. Peak T
= 25 °C
T
= 480 V
= 15 V
10
J
- Junction Temperature (°C)
R
G
Junction Temperature
- Gate Resistance (Ω)
J
20
= P
0.1
20 40 60 80 100 120 140 160
I
C
DM
P
= 100 A
DM
x Z
30
1
/t
t
1
thJC
2
t
Document Number: 94364
2
I
+ T
C
= 350 A
I
40
C
C
= 200 A
Revision: 02-Sep-09
R
V
V
GE
CC
G
= 2.0 Ω
1
= 15 V
= 480 V
50
60

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