GA200SA60U Vishay, GA200SA60U Datasheet - Page 3

• Manufacturer Part Number: GA200SA60U
• Description: IGBT UFAST 600V 100A SOT227
• Manufacturer: Vishay

Specifications of GA200SA60U

• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.9V @ 15V, 100A
• Current - Collector (ic) (max): 200A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 16.5nF @ 30V
• Power - Max: 500W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Not Compliant
• Other names: *GA200SA60U; VS-GA200SA60U; VS-GA200SA60U; VSGA200SA60U; VSGA200SA60U

Document Number: 94364
Revision: 02-Sep-09
1000
1000
100
100
10
10
5.0
0.5
Fig. 3 - Typical Transfer Characteristics
V
T
Fig. 2 - Typical Output Characteristics
200
160
120
J
CE
V
80
40
= 150 °C
0
1.0
GE
T
- Collector to Emitter Voltage (V)
0.1
J
= 150 °C
- Gate to Emitter Voltage (V)
Square wave:
Triangular wave:
1.5
6.0
T
J
Clamp voltage:
80 % of rated
= 25 °C
I
T
J
= 25 °C
2.0
Insulated Gate Bipolar Transistor
V
20 µs pulse width
For technical questions, contact:
V
5 µs pulse width
(Ultrafast Speed IGBT), 100 A
GE
GE
2.5
7.0
60 % of rated
= 15 V
= 25 V
Ideal diodes
I
voltage
3.0
Fig. 1 - Typical Load Current vs. Frequency
(Load Current = I
1
3.5
8.0
f - Frequency (kHz)
RMS
[e-mail]
of Fundamental)
Fig. 4 - Maximum Collector Current vs. Case Temperature
200
150
100
50
3
0
2
1
- 60 - 40 - 20 0
25
Fig. 5 - Typical Collector to Emitter Voltage vs.
10
Vishay High Power Products
V
80 µs pulse width
GE
T
= 15 V
J
T
50
- Junction Temperature (°C)
C
For both:
Duty cycle: 50 %
T
T
Gate drive as specified
Power dissipation = 140 W
- Case Temperature (°C)
Junction Temperature
J
sink
= 125 °C
= 90 °C
20 40 60 80 100 120 140 160
75
GA200SA60UP
100
I
I
C
C
= 200 A
= 400 A
I
C
= 100 A
125
100
www.vishay.com
150
3