GA200SA60U Vishay, GA200SA60U Datasheet - Page 2

• Manufacturer Part Number: GA200SA60U
• Description: IGBT UFAST 600V 100A SOT227
• Manufacturer: Vishay

Specifications of GA200SA60U

• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.9V @ 15V, 100A
• Current - Collector (ic) (max): 200A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 16.5nF @ 30V
• Power - Max: 500W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Not Compliant
• Other names: *GA200SA60U; VS-GA200SA60U; VS-GA200SA60U; VSGA200SA60U; VSGA200SA60U

GA200SA60UP
Vishay High Power Products
www.vishay.com
2
ELECTRICAL SPECIFICATIONS (T
PARAMETER
Collector to emitter breakdown voltage
Emitter to collector breakdown voltage
Temperature coeff. of breakdown voltage ΔV
Collector to emitter saturation voltage
Gate threshold voltage
Temperature coeff. of threshold voltage
Forward transconductance
Zero gate voltage collector current
Gate to emitter leakage current
SWITCHING CHARACTERISTICS (T
PARAMETER
Total gate charge (turn-on)
Gate-emitter charge (turn-on)
Gate-collector charge (turn-on)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on switching loss
Turn-off switching loss
Total switching loss
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total switching loss
Internal emitter inductance
Input capacitance
Output capacitance
Reverse transfer capacitance
For technical questions, contact:
ΔV
SYMBOL
SYMBOL
V
V
(BR)CES
V
V
GE(th)
(BR)CES
(BR)ECS
t
t
t
t
C
C
I
I
C
CE(on)
Q
Q
d(on)
d(off)
E
E
d(on)
d(off)
GE(th)
GES
Q
E
E
g
CES
L
t
t
t
t
oes
res
on
off
ies
ge
gc
fe
r
f
ts
r
f
ts
E
Insulated Gate Bipolar Transistor
g
J
/ΔT
(Ultrafast Speed IGBT), 100 A
/ΔT
= 25 °C unless otherwise specified)
J
= 25 °C unless otherwise specified)
J
J
I
V
V
T
I
V
V
R
Energy losses include “tail”
See fig. 9, 10, 14
T
I
V
Energy losses include “tail”
See fig. 10, 11, 14
Measured 5 mm from package
V
V
ƒ = 1.0 MHz; See fig. 7
V
V
Pulse width ≤ 80 µs; duty factor ≤ 0.1 %
V
I
I
I
V
V
V
Pulse width 5.0 µs, single shot
V
V
V
C
C
C
C
C
C
J
J
CC
GE
CC
GE
GE
GE
CC
GE
GE
GE
CE
CE
CE
GE
GE
GE
G
= 100 A
= 200 A
= 100 A, T
= 100 A
= 100 A
= 100 A, V
= 25 °C
= 150 °C
= 2.0 Ω
= V
= V
= 100 V, I
= 400 V
= 15 V; See fig. 8
= 480 V
= 15 V
= 15 V, R
= 0 V
= 30 V
= 0 V, I
= 0 V, I
= 0 V, I
= 0 V, V
= 0 V, V
= ± 20 V
GE
GE
TEST CONDITIONS
TEST CONDITIONS
, I
, I
C
C
C
C
C
CE
CE
J
CC
[e-mail]
= 250 µA
= 1.0 A
= 10 mA
G
= 250 µA
= 2.0 mA
C
= 150 °C
= 600 V
= 600 V, T
= 480 V
= 2.0 Ω
= 100 A
J
V
See fig. 2, 5
= 150 °C
GE
= 15 V
MIN.
MIN.
600
3.0
18
79
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
16 500
TYP.
TYP.
1000
0.38
1.60
1.92
1.54
0.98
3.48
4.46
7.24
- 11
770
100
260
130
300
160
460
200
5.0
54
79
56
75
Document Number: 94364
-
-
-
-
-
-
-
Revision: 02-Sep-09
MAX.
± 250
MAX.
1200
150
380
200
450
1.9
6.0
1.0
7.6
10
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
UNITS
UNITS
mV/°C
V/°C
mA
mJ
mJ
nA
nC
nH
pF
ns
ns
V
V
S