GA125TS120U Vishay, GA125TS120U Datasheet - Page 5

• Manufacturer Part Number: GA125TS120U
• Description: IGBT FAST 1200V 125A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA125TS120U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 125A
• Current - Collector (ic) (max): 125A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 22.258nF @ 30V
• Power - Max: 625W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 125A
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Supplier Unconfirmed

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Fig. 9 - Typical Switching Losses vs. Gate
40000
30000
20000
10000
80
70
60
50
40
0
0
Fig. 7 - Typical Capacitance vs.
V
V
T
I
1
J
C
CC
GE
Collector-to-Emitter Voltage
= 720V
= 15V
= 125 C
= 125A
R
V
10
G
CE
°
, Gate Resistance (Ohm)
V
C
C
C
, Collector-to-Emitter Voltage (V)
Resistance
GE
ies
res
oes
C
C
C
ies
oes
res
=
=
=
=
20
0V,
C
C
C
ge
gc
ce
+ C
+ C
10
f = 1MHz
gc ,
gc
30
C
ce
SHORTED
40
100
50
1000
100
10
20
16
12
8
4
0
Fig. 10 - Typical Switching Losses vs.
-60 -40 -20
0
R
R
V
V
V
I
Fig. 8 - Typical Gate Charge vs.
GE
CC
G1
CC
C
G
=15 ;R
= 400V
= 125A
= 15V
= 720V
= Ohm
Gate-to-Emitter Voltage
T , Junction Temperature ( C )
Junction Temperature
200
Q , Total Gate Charge (nC)
J
G
G2
0
GA125TS120U
= 0
20
400
40
60
600
80 100 120 140 160
I =
I =
I =
C
C
C
800
°
62.5
250
125
A
A
A
1000
5