GA125TS120U Vishay, GA125TS120U Datasheet - Page 2

• Manufacturer Part Number: GA125TS120U
• Description: IGBT FAST 1200V 125A INT-A-PAK
• Manufacturer: Vishay

Specifications of GA125TS120U

• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 3V @ 15V, 125A
• Current - Collector (ic) (max): 125A
• Current - Collector Cutoff (max): 1mA
• Input Capacitance (cies) @ Vce: 22.258nF @ 30V
• Power - Max: 625W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: INT-A-PAK (3 + 4)
• Channel Type: N
• Collector-emitter Voltage: 1.2kV
• Collector Current (dc) (max): 125A
• Gate To Emitter Voltage (max): ±20V
• Mounting: Screw
• Operating Temperature (min): -40C
• Operating Temperature (max): 125C
• Operating Temperature Classification: Automotive
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Lead Free Status / Rohs Status: Supplier Unconfirmed

GA125TS120U
Electrical Characteristics @ T
Dynamic Characteristics - T
V
V
V
g
I
V
I
Q
Qge
Q
t
t
t
t
E
E
E
C
C
C
t
I
Q
di
CES
GES
d(on)
r
d(off)
f
rr
rr
V
fe
(BR)CES
CE(on)
GE(th)
FM
on
off (1)
ts (1)
ies
oes
res
2
g
gc
rr
(rec)
GE(th)
M
/dt
/ T
J
Collector-to-Emitter Breakdown Voltage 1200
Collector-to-Emitter Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage
Forward Transconductance
Collector-to-Emitter Leaking Current
Diode Forward Voltage - Maximum
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Energy
Turn-Off Switching Energy
Total Switching Energy
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak ReverseCurrent
Diode Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
Parameter
Parameter
b
J
= 125°C (unless otherwise specified)
J
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
Min. Typ. Max. Units
3.0
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
— 22258 —
—
—
—
—
— 11360 —
—
1875
170
989 1484
167
328
186
159
459
404
989
192
181
126
2.2
2.1
-11
2.7
2.6
19
31
49
—
—
—
—
—
250
250
492
3.0
6.0
1.0
4.2
10
75
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
mV/°C V
A/µs
mA
nA
mJ
nC
pF
nC
V
S
V
ns
ns
A
V
V
V
V
V
V
V
I
I
V
V
I
T
R
I
V
V
Inductor load
V
V
ƒ = 1 MHz
I
R
R
V
di/dt =1448A/µs
F
F
C
C
C
J
GE
GE
GE
CE
CE
CE
GE
GE
GE
CC
CC =
GE
GE
CC
CC =
G1
G1
G2
= 125A, V
= 125A, V
= 148A
= 125A
= 125A
= 25°C
= 0V, I
= 15V, I
= 15V, I
= 6.0V, I
= 6.0V, I
= 25V, I
= 0V, V
= 0V, V
= ±20V
= 400V
= 15 , R
= ±15V
= 0V
= 30V
= 15
= 0
720V
720V
C
CE
CE
GE
C
C
C
Conditions
GE
Conditions
C
C
= 1mA
G2
= 125A
= 125A
= 125A, T
= 1.5mA
= 1.5mA
= 1200V
= 1200V, T
= 0V, T
= 0V
= 0 ,
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J
J
= 125°C
= 125°C
J
= 125°C