GA125TS120U Vishay, GA125TS120U Datasheet
GA125TS120U
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GA125TS120U Summary of contents
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... STG Thermal / Mechanical Characteristics Parameter R Thermal Resistance, Junction-to-Case - IGBT JC R Thermal Resistance, Junction-to-Case - Diode JC R Thermal Resistance, Case-to-Sink - Module CS Mounting Torque, Case-to-Heatsink Mounting Torque, Case-to-Terminal 1, 2 & 3 Weight of Module www.irf.com PD - 50053B GA125TS120U Ultra-Fast Speed IGBT 1200 CES V = 2.2V CE (on) typ 15V @V = ...
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... GA125TS120U Electrical Characteristics @ T Parameter V Collector-to-Emitter Breakdown Voltage 1200 (BR)CES V Collector-to-Emitter Voltage CE(on) V Gate Threshold Voltage GE(th Temperature Coeff. of Threshold Voltage GE(th Forward Transconductance fe I Collector-to-Emitter Leaking Current CES V Diode Forward Voltage - Maximum FM I Gate-to-Emitter Leakage Current GES Dynamic Characteristics - T Parameter Q Total Gate Charge (turn-on) ...
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... Frequency (KHz) (Load Current = I of fundamental) RMS 1000 100 ° 15V 1 2.5 3.0 4.0 Fig Typical Transfer Characteristics GA125TS120U For both: D uty cy cle: 50 125° 90°C s ink G ate drive as specified Dis sip ation = 120 W 10 ° 125 C J ° ...
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... GA125TS120U 150 125 100 100 T , Case Temperature ( C) C Fig Maximum Collector Current vs. Case Temperature 0.50 0 Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case 4 3 PULSE WIDTH 2.0 1.0 125 150 -60 -40 -20 ° Fig Typical Collector-to-Emitter Voltage vs. Junction Temperature 0 ecta ngu la r Pulse D u ration (se c) ...
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... Fig Typical Switching Losses vs. Gate Resistance www.irf.com SHORTED 100 0 Fig Typical Gate Charge vs. 1000 R = 100 -60 -40 -20 Fig Typical Switching Losses vs. GA125TS120U = 400V = 125A 200 400 600 800 Q , Total Gate Charge (nC) G Gate-to-Emitter Voltage = 0 = Ohm G2 = 15V = 720V 250 125 62 100 120 140 160 ° Junction Temperature ( ...
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... GA125TS120U 120 R = Ohm 125 C ° 720V CC 100 V = 15V 100 150 200 I , Collector Current (A) C Fig Typical Switching Losses vs. Collector-to-Emitter Current 125 ° 25° 1.0 1.5 2.0 2.5 3 lta Fig Typical Forward Voltage Drop vs. Instantaneous Forward Current 250 300 Fig Reverse Bias SOA ...
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... ° ° / /µs) f Fig Typical Reverse Recovery vs. di www.irf.com ° 5° . /dt Fig Typical Recovery Current vs GA125TS120U 2. / /µ /dt 7 ...
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... GA125TS120U Fig. 17a - Test Circuit for Measurement off(diode d(on Fig. 17c - Test Waveforms for Circuit of Fig. 18a, Defining d(on ff d(off) f Fig. 17b - Test Waveforms for Circuit of Fig. 18a, Defining Vce Fig. 17d - Test Waveforms for Circuit of Fig. 18a µ S Vce Ic dt ...
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... Figure 17e. Macro Waveforms for µ Figure 18. Clamped Inductive Load Test Circuit www.irf.com Figure 18a's D.U. 600V Figure 19. Pulsed Collector Current GA125TS120U Test Circuit 600V @25°C C Test Circuit 9 ...
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... GA125TS120U Notes: Repetitive rating 20V, pulse width limited by GE max. junction temperature. See fig. 17 For screws M5x0.8 Pulse width 50µs; single shot. Case Outline — INT-A-PAK IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel (0)20 8645 8000 IR GERMANY: Saalburgstrasse 157, 61350 Bad Homburg Tel (0) 6172 96590 IR JAPAN: K& ...