CPV363M4F Vishay, CPV363M4F Datasheet - Page 7

• Manufacturer Part Number: CPV363M4F
• Description: IGBT SIP MODULE 600V 9A IMS-2
• Manufacturer: Vishay

Specifications of CPV363M4F

• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.63V @ 15V, 16A
• Current - Collector (ic) (max): 16A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 1.1nF @ 30V
• Power - Max: 36W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Through Hole
• Package / Case: 19-SIP (13 Leads), IMS-2
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Other names: *CPV363M4F; VS-CPV363M4F; VS-CPV363M4F; VSCPV363M4F; VSCPV363M4F

Fig. 14 - Typical Reverse Recovery vs. di
Fig. 16 - Typical Stored Charge vs. di
6 0 0
4 0 0
2 0 0
1 6 0
1 2 0
8 0
4 0
0
0
1 0 0
1 0 0
V = 2 0 0 V
T = 1 2 5 °C
T = 2 5 ° C
R
J
J
I = 6.0 A
F
d i /dt - (A /µs)
I = 24 A
di /dt - (A/ µs)
F
f
f
I = 12 A
F
I = 1 2A
V = 2 0 0 V
T = 1 2 5 °C
T = 2 5 ° C
F
R
J
J
I = 2 4A
F
I = 6.0 A
F
f
/dt
f
/dt
1 0 0 0
1 0 0 0
Fig. 15 - Typical Recovery Current vs. di
1 0 0 0 0
1 0 0 0
1 0 0
1 0 0
1 0
1 0
Fig. 17 - Typical di
1
1 0 0
1 0 0
I = 6.0A
V = 2 0 0 V
T = 1 2 5 °C
T = 2 5 ° C
F
R
J
J
V = 2 0 0 V
T = 1 2 5 ° C
T = 2 5 °C
R
J
J
I = 1 2A
F
I = 2 4A
F
CPV363M4F
di /dt - (A / µs)
d i /dt - (A /µs)
I = 6.0 A
F
f
f
(rec)M
I = 2 4A
F
/dt vs. di
I = 1 2A
F
f
/dt
f
/dt
1 0 0 0
1 0 0 0