CPV363M4F Vishay, CPV363M4F Datasheet - Page 2

• Manufacturer Part Number: CPV363M4F
• Description: IGBT SIP MODULE 600V 9A IMS-2
• Manufacturer: Vishay

Specifications of CPV363M4F

• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.63V @ 15V, 16A
• Current - Collector (ic) (max): 16A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 1.1nF @ 30V
• Power - Max: 36W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Through Hole
• Package / Case: 19-SIP (13 Leads), IMS-2
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Other names: *CPV363M4F; VS-CPV363M4F; VS-CPV363M4F; VSCPV363M4F; VSCPV363M4F

Electrical Characteristics @ T
Switching Characteristics @ T
CPV363M4F
V
V
V
g
I
V
I
Q
Q
Q
t
t
t
t
E
E
E
t
t
t
t
E
C
C
C
t
I
Q
di
CES
GES
d(on)
r
d(off)
f
d(on)
r
d(off)
f
rr
rr
V
V
fe
(BR)CES
CE(on)
GE(th)
FM
on
off
ts
ts
ies
oes
res
g
ge
gc
rr
(rec)M
(BR)CES
GE(th)
/dt
/ T
/ T
J
J
Collector-to-Emitter Breakdown Voltage
Temperature Coeff. of Breakdown Voltage
Collector-to-Emitter Saturation Voltage
Gate Threshold Voltage
Temperature Coeff. of Threshold Voltage –––
Forward Transconductance
Zero Gate Voltage Collector Current
Diode Forward Voltage Drop
Gate-to-Emitter Leakage Current
Total Gate Charge (turn-on)
Gate - Emitter Charge (turn-on)
Gate - Collector Charge (turn-on)
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Turn-On Switching Loss
Turn-Off Switching Loss
Total Switching Loss
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Switching Loss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Diode Reverse Recovery Time
Diode Peak Reverse Recovery Charge
Diode Reverse Recovery Charge
Diode Peak Rate of Fall of Recovery
During t
Parameter
Parameter
b
J
J
= 25°C (unless otherwise specified)
= 25°C (unless otherwise specified)
Min. Typ. Max. Units
––– 1.37
Min. Typ. Max. Units
600
––– 0.69
––– 1.63
––– 1.37
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 0.30
––– 0.55
––– 0.85
–––
–––
–––
–––
––– 1.57
–––
–––
–––
–––
–––
–––
–––
–––
–––
3.0
6.0
––– 1100 –––
–––
–––
–––
–––
––– 2500
––– ±100
-11
8.0
1.3
1.2
220
160
400
290
220
180
116
8.1
3.5
5.6
39
37
74
42
80
54
21
16
16
14
80
–––
–––
–––
–––
––– mV/°C V
–––
250
1.5
6.0
1.6
–––
330
240
–––
–––
–––
–––
120
180
600
–––
1.7
–––
–––
–––
–––
–––
–––
–––
1.3
6.0
82
12
32
60
10
V/°C
A/µs
µA
nA
V
V
S
V
nC
nC
mJ
mJ
pF
ns
ns
ns
A
V
V
I
I
I
V
V
V
V
I
I
V
V
T
Energy losses include "tail" and
T
Energy losses include "tail" and
V
T
T
T
I
V
I
V
diode reverse recovery.
See Fig. 9, 10, 11, 18
I
V
diode reverse recovery.
V
ƒ = 1.0MHz
T
T
T
T
T
C
C
C
C
C
C
C
C
GE
GE
CE
CE
CE
GE
GE
GE
J
J
J
J
J
J
J
J
J
J
CC
GE
GE
GE
GE
CC
= 16A
= 8.7A, T
= 12A
= 12A, T
= 8.7A
= 8.7A
= 8.7A, V
= 8.7A, V
= 125°C
= 125°C
= 125°C
= 125°C
= 25°C
= 150°C,
= 25°C
= 25°C
= 25°C
= 25°C
= 100V, I
= 0V, I
= V
= V
= 0V, V
= 0V, V
= ±20V
= 0V, I
= 400V
= 0V
= 30V
= 15V
= 15V, R
= 15V, R
GE
GE
, I
, I
J
C
C
J
CE
CE
CC
CC
C
C
Conditions
= 150°C
Conditions
= 250µA
= 1.0mA
= 150°C
See Fig.
See Fig.
See Fig.
See Fig.
C
G
G
= 250µA
= 250µA
= 600V
= 600V, T
= 480V
= 480V
= 8.7A
= 22
= 22
17
See Fig. 9, 10, 11, 18
14
15
16
See Fig. 8
See Fig. 7
V
See Fig. 2, 5
See Fig. 13
J
di/dt =200Aµs
GE
= 150°C
V
I
F
= 15V
R
= 12A
= 200V