CPV363M4F Vishay, CPV363M4F Datasheet - Page 4

• Manufacturer Part Number: CPV363M4F
• Description: IGBT SIP MODULE 600V 9A IMS-2
• Manufacturer: Vishay

Specifications of CPV363M4F

• Configuration: Three Phase Inverter
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.63V @ 15V, 16A
• Current - Collector (ic) (max): 16A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 1.1nF @ 30V
• Power - Max: 36W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Through Hole
• Package / Case: 19-SIP (13 Leads), IMS-2
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Igbt Type: -
• Other names: *CPV363M4F; VS-CPV363M4F; VS-CPV363M4F; VSCPV363M4F; VSCPV363M4F

CPV363M4F
Fig. 4 - Maximum Collector Current vs. Case
0.01
20
16
12
0 .1
10
0.0000 1
8
4
0
1
25
D = 0.50
0.02
0.01
0.20
0.10
0.05
Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
50
T , Case Temperature (
C
( THE RMAL RES PO NSE)
Temperature
SINGLE PULSE
0.0001
75
100
t , R e ct an gu la r P ulse D ura tion (s ec )
0.001
°
1
125
C)
150
0.0 1
Fig. 5 - Typical Collector-to-Emitter Voltage
2.0
1.8
1.6
1.4
1.2
1.0
-60 -40 -20
V
80 us PULSE WIDTH
GE
vs. Junction Temperature
= 15V
Note s:
1. Du ty fac tor D = t
2. Pe ak T = P
T , Junction Temperature ( C)
0.1
J
0
20
J
40
D M
x Z
60
1
/ t
th JC
2
P
1
80 100 120 140 160
D M
+ T
C
t
I =
I =
I =
1
C
C
C
t 2
17.4
4.35
°
8.7
A
A
A
1 0