MUBW50-12T8 IXYS, MUBW50-12T8 Datasheet - Page 5

• Manufacturer Part Number: MUBW50-12T8
• Description: MODULE IGBT CBI E3
• Manufacturer: IXYS

Specifications of MUBW50-12T8

• Igbt Type: Trench
• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.15V @ 15V, 50A
• Current - Collector (ic) (max): 80A
• Current - Collector Cutoff (max): 2.7mA
• Input Capacitance (cies) @ Vce: 3.5nF @ 25V
• Power - Max: 270W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: E3
• Vrrm, Rect 1/3 Ph., (v): 1600
• Idavm, Tc = 80°c, Rect 1/3 Ph., (a): 140
• Rthjc, Typ, Rect 1/3 Ph., (k/w): 1.00
• Vces, Inv 3 - Ph., (v): 1200
• Ic25, Tc = 25°c, Inv 3 - Ph., (a): 80
• Ic80, Tc = 80°c, Inv 3 - Ph., (a): 50
• Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v): 1.7
• Rthjc, Typ, Inv 3 - Ph., (k/w): 0.46
• Vces, Br Chopper, (v): 1200
• Ic80, Tc = 80°c, Br Chopper, (a): 35
• Rthjc, Typ, Br Chopper, (k/w): 0.62
• Package Style: E3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
[A]
Z
[K/W]
I
Input Rectifier Bridge D11 - D16
F
thJC
P
0.01
100
tot
0.1
450
400
350
300
250
200
150
100
80
60
40
20
W
50
0.001
0
1
0
0.4
0
Fig.  Typ. forward current vs.
Fig. 2 Transient thermal impedance junction to case
T
T
VJ
VJ
20
= 125°C
= 25°C
0.6
40
voltage drop per diode
0.8
60
V
F
80 100 120 140 160 180
[V]
0.01
1.0
1.2
I
d(AV)M
1.4
A
t [s]
0.1
0
20
I
FSM
500
400
300
200
100
0.001
0
40
A
50Hz, 80% V
60
T
VJ
T
80 100 120 140
1
VJ
= 150°C
0.01
= 45°C
T
amb
RRM
0.05 K/W
0.15 K/W
R
0.3 K/W
0.5 K/W
thA
1 K/W
2 K/W
5 K/W
:
0.1
C
t
10
s
1
I
I
2
d(AV)
t
A
160
140
120
100
10
10
10
MUBW 50-12 T8
80
60
40
20
2
A
s
0
4
3
2
1
0
T
VJ
= 45°C
20 40 60 80 100 120 140
T
VJ
= 150°C
2
3
t
4
T
C
5 6 7 8 9
ms
5 - 7
C
10