MUBW50-12A8 IXYS, MUBW50-12A8 Datasheet
MUBW50-12A8
Specifications of MUBW50-12A8
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MUBW50-12A8 Summary of contents
Page 1
... Hz FSM 25°C tot C Symbol Conditions 25° 125° 25° RRM T = 125° (per diode) thJC IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved (CBI3 NTC 9 Three Phase Inverter V = 1200 V CES ...
Page 2
... /dt = -500 A/µ 600 (per diode) thJC IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved Maximum Ratings 1200 ± 125° 100 VJ CM ≤ CEK CES = 22 Ω 125° 350 Characteristic Values (T = 25°C, unless otherwise specified) VJ min ...
Page 3
... 25° RRM T = 125° /dt = -400 A/µ 600 thJC IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved Maximum Ratings 1200 ± 125° ≤ CEK CES = 47 Ω 125° 225 Characteristic Values (T = 25°C, unless otherwise specified) VJ min ...
Page 4
... Creepage distance on surface S d Strike distance in air A R with heatsink compound thCH Weight IXYS reserves the right to change limits, test conditions and dimensions. © 2007 IXYS All rights reserved MUBW 50-12 A8 Characteristic Values min. typ. max. 4.75 5.0 5.25 kΩ 3375 ...