MUBW50-12T8 IXYS, MUBW50-12T8 Datasheet - Page 4

• Manufacturer Part Number: MUBW50-12T8
• Description: MODULE IGBT CBI E3
• Manufacturer: IXYS

Specifications of MUBW50-12T8

• Igbt Type: Trench
• Configuration: Three Phase Inverter with Brake
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.15V @ 15V, 50A
• Current - Collector (ic) (max): 80A
• Current - Collector Cutoff (max): 2.7mA
• Input Capacitance (cies) @ Vce: 3.5nF @ 25V
• Power - Max: 270W
• Input: Three Phase Bridge Rectifier
• Ntc Thermistor: Yes
• Mounting Type: Chassis Mount
• Package / Case: E3
• Vrrm, Rect 1/3 Ph., (v): 1600
• Idavm, Tc = 80°c, Rect 1/3 Ph., (a): 140
• Rthjc, Typ, Rect 1/3 Ph., (k/w): 1.00
• Vces, Inv 3 - Ph., (v): 1200
• Ic25, Tc = 25°c, Inv 3 - Ph., (a): 80
• Ic80, Tc = 80°c, Inv 3 - Ph., (a): 50
• Vce(sat), Typ, Tj = 25°c, Inv 3 - Ph., (v): 1.7
• Rthjc, Typ, Inv 3 - Ph., (k/w): 0.46
• Vces, Br Chopper, (v): 1200
• Ic80, Tc = 80°c, Br Chopper, (a): 35
• Rthjc, Typ, Br Chopper, (k/w): 0.62
• Package Style: E3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Dimensions in mm (1 mm = 0.0394")
IXYS reserves the right to change limits, test conditions and dimensions.
© 2006 IXYS All rights reserved
Symbol
R
B
Module
Symbol
T
T
T
V
M
Symbol
R
d
d
R
Weight
Temperature Sensor NTC
A
VJ
JM
stg
S
25
25/50
ISO
therm-chip
thCH
d
Conditions
T = 25°C
Conditions
operating
I
Mounting torque (M5)
Conditions
Resistance terminal to chip
Creepage distance on surface
Strike distance in air
with heatsink compound
ISOL
<  mA; 50/60 Hz
min.
min.
4.75
6
6
Characteristic Values
Characteristic Values
3375
Maximum Ratings
0.0
typ.
typ.
300
5.0
-40...+25
-40...+25
5
max.
+50
2500
max.
3 - 6
5.25
K/W
mm
mm
mΩ
Nm
kΩ
V~
°C
°C
°C
K
g
MUBW 50-12 T8
4 - 7