IXDN55N120D1 IXYS, IXDN55N120D1 Datasheet - Page 4

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IXDN55N120D1

Manufacturer Part Number
IXDN55N120D1
Description
IGBT 1200V 100A W/DIODE SOT-227B
Manufacturer
IXYS
Datasheet

Specifications of IXDN55N120D1

Igbt Type
NPT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
2.8V @ 15V, 55A
Current - Collector (ic) (max)
100A
Current - Collector Cutoff (max)
3.8mA
Input Capacitance (cies) @ Vce
3.3nF @ 25V
Power - Max
450W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SOT-227, miniBLOC
Vces, (v)
1200
Ic25, Tc=25°c, Igbt, (a)
100
Ic90, Tc=90°c, Igbt, (a)
62
Vce(sat), Max, Tj=25°c, Igbt, (v)
2.8
Tfi, Typ, Igbt, (ns)
70
Eoff, Typ, Tj=125°c, Igbt, (mj)
6.2
Rthjc, Max, Igbt, (°c/w)
0.28
If, Tc=90°c, Diode, (a)
60
Rthjc, Max, Diode, (k/w)
0.6
Package Style
SOT-227B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IXDN55N120D1
Manufacturer:
IXYS
Quantity:
27
© 2002 IXYS All rights reserved
E
E
I
CM
on
on
120
100
mJ
24
18
12
20
15
10
80
60
40
20
mJ
A
6
0
5
0
0
0
0 10 20 30 40 50 60 70 80 90 100
0
Fig. 7 Typ. turn on energy and switching
Fig. 9 Typ. turn on energy and switching
Fig. 11 Reverse biased safe operating area
V
V
I
T
C
J
CE
GE
t
= 125°C
= 50A
= 600V
= ±15V
200
d(on)
E
on
t
20
r
times versus collector current
times versus gate resistor
RBSOA
400
40
600
R
T
V
J
CEK
G
= 125°C
= 22Ω
< V
60
800 1000 1200
CES
R
I
G
C
80
t
E
d(on)
t
V
V
R
T
V
on
r
CE
GE
J
G
CE
= 125°C
= 600V
= 22Ω
= ±15V
100
V
Ω
A
120
90
60
30
0
240
180
120
60
0
ns
ns
t
t
0.00001
Z
E
E
0.0001
thJC
off
off
0.001
0.01
K/W
0.1
mJ
0.00001 0.0001
12
10
10
mJ
8
6
4
2
0
8
6
4
2
0
1
0
0 10 20 30 40 50 60 70 80 90 100
Fig. 8 Typ. turn off energy and switching
Fig.10 Typ. turn off energy and switching
Fig. 12 Typ. transient thermal impedance
V
V
I
T
C
J
CE
GE
= 125°C
= 50A
= 600V
= ±15V
20
single pulse
times versus collector current
times versus gate resistor
diode
40
0.001
IXDN 55N120 D1
60
IGBT
0.01
R
G
I
C
80
t
V
V
R
T
0.1
J
CE
GE
G
t
= 125°C
E
= 22Ω
d(off)
IXDN55N120
= 600V
= ±15V
100
off
t
s
E
t
t
d(off)
f
f
off
A
Ω
1
600
500
400
300
200
100
0
ns
1500
1200
900
600
300
0
ns
4 - 4
t
t

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