IXDN55N120D1 IXYS, IXDN55N120D1 Datasheet
IXDN55N120D1
Specifications of IXDN55N120D1
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IXDN55N120D1 Summary of contents
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... V (BR)CES mA GE(th CES CE CES ± GES CE(sat © 2002 IXYS All rights reserved G Maximum Ratings 1200 = 20 kΩ 1200 GE ±20 ±30 100 62 124 = 22 Ω 100 < V CEK CES , T = 125° 450 220 2500 -40 ... +150 -40 ... +150 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 Characteristic Values (T = 25° ...
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... A/µ 125° -di /dt = 100 A/µ thJC miniBLOC, SOT-227 B M4 screws (4x) supplied © 2002 IXYS All rights reserved Characteristic Values (T = 25°C, unless otherwise specified) J min. typ. max. 3300 500 220 = 0.5 V 240 CE CES 100 70 = 125°C J 500 70 8.4 6 ...
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... Fig. 1 Typ. output characteristics 120 V = 20V 25°C J 100 Fig. 3 Typ. transfer characteristics 600V 50A 100 150 Fig. 5 Typ. turn on gate charge © 2002 IXYS All rights reserved V =17V GE 15V I C 13V 11V 9V 2.5 3 200 250 IXDN 55N120 D1 120 T = 125° 100 0.0 ...
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... Fig. 9 Typ. turn on energy and switching times versus gate resistor 120 A 100 22Ω 125° < V CEK CES 200 400 600 800 1000 1200 Fig. 11 Reverse biased safe operating area RBSOA © 2002 IXYS All rights reserved 120 off 600V ±15V 22Ω 125° 100 240 t ...