IXDN55N120D1 IXYS, IXDN55N120D1 Datasheet - Page 3

• Manufacturer Part Number: IXDN55N120D1
• Description: IGBT 1200V 100A W/DIODE SOT-227B
• Manufacturer: IXYS

Specifications of IXDN55N120D1

• Igbt Type: NPT
• Configuration: Single
• Voltage - Collector Emitter Breakdown (max): 1200V
• Vce(on) (max) @ Vge, Ic: 2.8V @ 15V, 55A
• Current - Collector (ic) (max): 100A
• Current - Collector Cutoff (max): 3.8mA
• Input Capacitance (cies) @ Vce: 3.3nF @ 25V
• Power - Max: 450W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SOT-227, miniBLOC
• Vces, (v): 1200
• Ic25, Tc=25°c, Igbt, (a): 100
• Ic90, Tc=90°c, Igbt, (a): 62
• Vce(sat), Max, Tj=25°c, Igbt, (v): 2.8
• Tfi, Typ, Igbt, (ns): 70
• Eoff, Typ, Tj=125°c, Igbt, (mj): 6.2
• Rthjc, Max, Igbt, (°c/w): 0.28
• If, Tc=90°c, Diode, (a): 60
• Rthjc, Max, Diode, (k/w): 0.6
• Package Style: SOT-227B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

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I
I
V
C
C
GE
120
100
120
100
80
60
40
20
20
15
10
80
60
40
20
A
A
V
0
5
0
0
0.0
5
0
Fig. 1 Typ. output characteristics
Fig. 3 Typ. transfer characteristics
Fig. 5 Typ. turn on gate charge
T
V
T
J
V
I
CE
J
C
= 25°C
= 25°C
CE
= 20V
0.5
= 600V
= 50A
6
50
1.0
7
100
1.5
8
150
2.0
9
V
V
200
CE
GE
2.5
10
Q
G
V
250
GE
3.0
11
=17V
15V
13V
11V
9V
V
V
nC
I
I
C
I
F
RM
120
100
180
150
120
120
A
90
60
30
80
40
80
60
40
20
A
A
0
0
0
0.0
0
0
Fig. 2 Typ. output characteristics
Fig. 4 Typ. forward characteristics of
Fig. 6 Typ. turn off characteristics of
T
J
= 125°C
0.5
200
free wheeling diode
free wheeling diode
1.0
I
1
RM
t
rr
1.5
400
IXDN 55N120 D1
2.0
2
T
J
600
= 125°C
2.5
V
-di/dt
V
CE
F
3.0
T
V
I
F
3
J
R
800
= 125°C
= 50A
= 600V
A/μs
T
J
V
3.5
IXDN55N120
= 25°C
GE
V
=17V
15V
13V
11V
9V
V
1000
4
300
200
100
0
ns
3 - 4
t
rr