APTGT300A170G Microsemi Power Products Group, APTGT300A170G Datasheet - Page 5

• Manufacturer Part Number: APTGT300A170G
• Description: IGBT PHASE TRENCH FIELD STOP SP6
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT300A170G

• Igbt Type: Trench and Field Stop
• Configuration: Half Bridge
• Voltage - Collector Emitter Breakdown (max): 1700V
• Vce(on) (max) @ Vge, Ic: 2.4V @ 15V, 300A
• Current - Collector (ic) (max): 400A
• Current - Collector Cutoff (max): 750µA
• Input Capacitance (cies) @ Vce: 26.5nF @ 25V
• Power - Max: 1660W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
20
15
10
0.16
0.14
0.12
0.08
0.06
0.04
0.02
0.1
5
0
0.00001
0
0
Operating Frequency vs Collector Current
switching
0.9
0.05
hard
0.7
0.5
0.1
0.3
80
ZCS
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
160
ZVS
0.0001
I
C
240
(A)
320
V
D=50%
R
T
T
J
C
CE
G
=125°C
=75°C
=2.2Ω
=900V
400
0.001
rectangular Pulse Duration (Seconds)
www.microsemi.com
Single Pulse
480
0.01
Diode
600
500
400
300
200
100
0
0
APTGT300A170G
T
0.1
Forward Characteristic of diode
J
=125°C
0.5
1
V
T
F
1.5
J
=25°C
(V)
1
2
T
J
=125°C
2.5
10
3
5 - 5