APTGT75TA120PG Microsemi Power Products Group, APTGT75TA120PG Datasheet
APTGT75TA120PG
Specifications of APTGT75TA120PG
Related parts for APTGT75TA120PG
APTGT75TA120PG Summary of contents
Page 1
... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGT75TA120PG V ® I Application • Welding converters VBUS3 • Switched Mode Power Supplies • ...
Page 2
... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy r APTGT75TA120PG = 25°C unless otherwise specified j Test Conditions 1200V =15V T = 25° 75A T = 125°C C ...
Page 3
... Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6-P Package outline (dimensions in mm) See application note 1902 - Mounting Instructions for SP6-P (12mm) Power Modules on www.microsemi.com APTGT75TA120PG Min IGBT Diode 2500 -40 -40 -40 To heatsink M6 3 www.microsemi.com Typ Max Unit 0 ...
Page 4
... Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.4 0.35 0.9 0.3 0.7 0.25 0.5 0.2 0.3 0.15 0.1 0.1 0.05 0.05 0 0.00001 0.0001 APTGT75TA120PG =15V) GE 150 T 125 T =125°C J 100 Energy losses vs Collector Current 17.5 V =25°C ...
Page 5
... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGT75TA120PG Forward Characteristic of diode 150 ...