APTGT300DA170G Microsemi Power Products Group, APTGT300DA170G Datasheet
APTGT300DA170G
Specifications of APTGT300DA170G
Related parts for APTGT300DA170G
APTGT300DA170G Summary of contents
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... Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGT300DA170G V ® I Application • AC and DC motor control VBUS • Switched Mode Power Supplies • ...
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... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy r APTGT300DA170G = 25°C unless otherwise specified j Test Conditions 1700V 25° 15V 300A T = 125°C C ...
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... T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTGT300DA170G IGBT Diode To heatsink M6 For terminals M5 www.microsemi.com Min Typ Max Unit 0.075 °C/W ...
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... Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.08 0.9 0.07 0.06 0.7 0.05 0.5 0.04 0.03 0.3 0.02 0.1 0.01 0.05 0 0.00001 0.0001 APTGT300DA170G =15V) GE 600 500 400 T =125°C J 300 200 100 Energy losses vs Collector Current 240 V T =25° ...
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... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGT300DA170G Forward Characteristic of diode 600 ...