APTGT300DA170D3G Microsemi Power Products Group, APTGT300DA170D3G Datasheet - Page 2
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APTGT300DA170D3G
Manufacturer Part Number
APTGT300DA170D3G
Description
IGBT 1700V 530A 1470W D3
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGT300DA170D3G.pdf
(3 pages)
Specifications of APTGT300DA170D3G
Igbt Type
Trench and Field Stop
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
1700V
Vce(on) (max) @ Vge, Ic
2.4V @ 15V, 300A
Current - Collector (ic) (max)
530A
Current - Collector Cutoff (max)
8mA
Input Capacitance (cies) @ Vce
26nF @ 25V
Power - Max
1470W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
D3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APTGT300DA170D3G
Quantity:
50
Electrical Characteristics
Dynamic Characteristics
Reverse diode ratings and characteristics
Thermal and package characteristics
Symbol Characteristic
Symbol Characteristic
Symbol Characteristic
Symbol Characteristic
Torque
BV
V
V
V
T
T
T
T
R
T
I
I
C
C
E
CE(on)
Wt
GE(th)
V
Q
T
CES
GES
T
d(off)
T
T
d(off)
T
E
T
d(on)
d(on)
ISOL
STG
thJC
res
off
ies
CES
C
F
rr
J
r
f
r
f
r
Collector - Emitter Breakdown Voltage
Zero Gate Voltage Collector Current
Collector Emitter on Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
Input Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn Off Energy
Diode Forward Voltage
Reverse Recovery Energy
Reverse Recovery Charge
Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min,
I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
All ratings @ T
APT website – http://www.advancedpower.com
j
= 25°C unless otherwise specified
V
Test Conditions
I
V
I
V
di/dt =900A/µs
I
V
di/dt =900A/µs
Test Conditions
V
V
I
V
V
Test Conditions
V
f = 1MHz
Inductive Switching (25°C)
V
V
I
R
Inductive Switching (125°C)
V
V
I
R
For terminals
C
C
C
F
F
F
To Heatsink
GE
G
G
GE
GE
GE
GE
GE
GE
Bus
GE
Bus
GE
R
R
= 300A
= 300A
= 300A
= 300A
= 300A
= 300A
= 4.7Ω
= 4.7Ω
= 900V
= 900V
= 0V, V
= 0V
= 0V, I
= 15V
= V
= 20V, V
= 0V, V
= 15V
= 15V
= 900V
= 900V
CE
, I
C
CE
CE
= 8mA
C
CE
= 1700V
= 12 mA
= 25V
APTGT300DA170D3
= 0V
T
T
T
T
T
T
T
T
j
j
j
j
j
j
j
j
Diode
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
= 25°C
= 125°C
IGBT
M6
M6
3500
Min
-40
-40
-40
Min
1700
Min
Min
5.2
3
3
Typ
1000
Typ
125
Typ
Typ
280
100
850
120
330
100
200
1.8
1.9
2.0
2.4
5.8
0.9
35
70
75
26
95
0.085
Max
0.13
Max
150
125
125
380
Max
Max
400
2.2
2.4
6.4
5
5
8
Unit
°C/W
Unit
N.m
Unit
Unit
mA
mJ
µC
°C
nA
mJ
nF
V
ns
ns
V
V
V
V
g
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