APTGT150DU170G Microsemi Power Products Group, APTGT150DU170G Datasheet
APTGT150DU170G
Specifications of APTGT150DU170G
Related parts for APTGT150DU170G
APTGT150DU170G Summary of contents
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... V Gate – Emitter Voltage GE P Maximum Power Dissipation D RBSOA Reverse Bias Safe Operating Area These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com APTGT150DU170G V ® I Application • AC Switches • Switched Mode Power Supplies Q2 • ...
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... Maximum Peak Repetitive Reverse Voltage RRM I Maximum Reverse Leakage Current Forward Current F V Diode Forward Voltage F t Reverse Recovery Time rr Q Reverse Recovery Charge rr E Reverse Recovery Energy r APTGT150DU170G = 25°C unless otherwise specified j Test Conditions 1700V 25° 15V 150A T = 125°C C ...
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... T Storage Temperature Range STG T Operating Case Temperature C Torque Mounting torque Wt Package Weight SP6 Package outline (dimensions in mm) See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTGT150DU170G IGBT Diode To heatsink M6 For terminals M5 www.microsemi.com Min Typ Max Unit 0.14 °C/W ...
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... Gate Resistance (ohms) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.16 0.14 0.9 0.12 0.7 0.1 0.08 0.5 0.06 0.3 0.04 0.1 0.02 0.05 0 0.00001 0.0001 APTGT150DU170G =15V) GE 300 250 200 T =125°C J 150 100 Energy losses vs Collector Current 120 V T =25° ...
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... Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APTGT150DU170G Forward Characteristic of diode 300 ...