APTGT150TDU60PG Microsemi Power Products Group, APTGT150TDU60PG Datasheet - Page 5

• Manufacturer Part Number: APTGT150TDU60PG
• Description: IGBT MODULE TRPL DUAL SRCE SP6P
• Manufacturer: Microsemi Power Products Group

Specifications of APTGT150TDU60PG

• Igbt Type: Trench and Field Stop
• Configuration: Triple, Dual - Common Source
• Voltage - Collector Emitter Breakdown (max): 600V
• Vce(on) (max) @ Vge, Ic: 1.9V @ 15V, 150A
• Current - Collector (ic) (max): 225A
• Current - Collector Cutoff (max): 250µA
• Input Capacitance (cies) @ Vce: 9.2nF @ 25V
• Power - Max: 480W
• Input: Standard
• Ntc Thermistor: No
• Mounting Type: Chassis Mount
• Package / Case: SP6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
0.6
0.5
0.4
0.3
0.2
0.1
120
100
0.00001
80
60
40
20
0
0
Operating Frequency vs Collector Current
0
ZCS
0.5
0.3
0.9
0.7
0.1
0.05
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
switching
Hard
ZVS
50
0.0001
I
100
C
(A)
V
D=50%
R
T
T
150
CE
G
J
c
=150°C
=85°C
=3.3Ω
=300V
0.001
Rectangular Pulse Duration in Seconds
Single Pulse
200
www.microsemi.com
Diode
0.01
APTGT150TDU60PG
300
250
200
150
100
50
0
0
0.1
Forward Characteristic of diode
T
0.4
J
=150°C
T
0.8
J
=125°C
V
1.2
F
1
(V)
T
J
1.6
=25°C
2
10
2.4
5 - 5