APTGT150TA60PG Microsemi Power Products Group, APTGT150TA60PG Datasheet - Page 5
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APTGT150TA60PG
Manufacturer Part Number
APTGT150TA60PG
Description
IGBT MODULE TRPL PHASE LEG SP6P
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGT150TA60PG.pdf
(5 pages)
Specifications of APTGT150TA60PG
Igbt Type
Trench and Field Stop
Configuration
Three Phase
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.9V @ 15V, 150A
Current - Collector (ic) (max)
225A
Current - Collector Cutoff (max)
250µA
Input Capacitance (cies) @ Vce
9.2nF @ 25V
Power - Max
480W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
0.6
0.5
0.4
0.3
0.2
0.1
120
100
0.00001
80
60
40
20
0
0
Operating Frequency vs Collector Current
0
ZCS
0.5
0.3
0.9
0.7
0.1
0.05
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
switching
Hard
ZVS
50
0.0001
I
100
C
(A)
V
D=50%
R
T
T
150
CE
G
J
c
=150°C
=85°C
=3.3Ω
=300V
0.001
Rectangular Pulse Duration in Seconds
Single Pulse
200
www.microsemi.com
Diode
0.01
300
250
200
150
100
50
APTGT150TA60PG
0
0
0.1
Forward Characteristic of diode
T
0.4
J
=150°C
T
0.8
J
=125°C
V
1.2
F
1
(V)
T
J
1.6
=25°C
2
10
2.4
5 - 5