APTGT400A60D3G Microsemi Power Products Group, APTGT400A60D3G Datasheet - Page 5
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APTGT400A60D3G
Manufacturer Part Number
APTGT400A60D3G
Description
IGBT MOD TRENCH PHASE LEG D3
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGT400A60D3G.pdf
(5 pages)
Specifications of APTGT400A60D3G
Igbt Type
Trench and Field Stop
Configuration
Half Bridge
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
1.9V @ 15V, 400A
Current - Collector (ic) (max)
500A
Current - Collector Cutoff (max)
500µA
Input Capacitance (cies) @ Vce
24nF @ 25V
Power - Max
1250W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
D3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Microsemi reserves the right to change, without notice, the specifications and information contained herein
Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103
5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262
and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
0.25
0.15
0.05
80
60
40
20
0.2
0.1
0
0.00001
0
0
Operating Frequency vs Collector Current
0.5
switching
0.3
0.9
0.1
0.7
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
0.05
Hard
100
ZVS
200
0.0001
I
C
(A)
300
ZCS
V
D=50%
R
T
T
J
c
CE
G
=150°C
=85°C
=1.5Ω
400
=300V
Rectangular Pulse Duration in Seconds
0.001
Single Pulse
500
Diode
www.microsemi.com
0.01
600
500
400
300
200
100
APTGT400A60D3G
0
0
0.1
Forward Characteristic of diode
T
0.4
J
=150°C
0.8
V
1.2
F
1
(V)
T
J
1.6
=25°C
2
10
2.4
5 - 5