APTGF660U60D4G Microsemi Power Products Group, APTGF660U60D4G Datasheet - Page 2
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APTGF660U60D4G
Manufacturer Part Number
APTGF660U60D4G
Description
IGBT 600V 860A 2800W D4
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGF660U60D4G.pdf
(3 pages)
Specifications of APTGF660U60D4G
Igbt Type
NPT
Configuration
Single
Voltage - Collector Emitter Breakdown (max)
600V
Vce(on) (max) @ Vge, Ic
2.45V @ 15V, 800A
Current - Collector (ic) (max)
860A
Current - Collector Cutoff (max)
500µA
Input Capacitance (cies) @ Vce
36nF @ 25V
Power - Max
2800W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
D4
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Electrical Characteristics
Dynamic Characteristics
Reverse diode ratings and characteristics
Thermal and package characteristics
Symbol Characteristic
Symbol Characteristic
Symbol Characteristic
Symbol Characteristic
Torque
V
V
T
T
V
T
T
R
T
I
I
C
C
E
E
CE(on)
GE(th)
V
Q
T
Wt
CES
d(off)
d(off)
GES
d(on)
T
T
d(on)
T
T
T
ISOL
STG
thJC
ies
res
on
off
C
rr
r
f
r
f
F
J
Zero Gate Voltage Collector Current
Collector Emitter on Voltage
Gate Threshold Voltage
Gate – Emitter Leakage Current
Input Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn on Energy
Turn off Energy
Diode Forward Voltage
Reverse Recovery Charge
Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
All ratings @ T
APT website – http://www.advancedpower.com
j
= 25°C unless otherwise specified
Test Conditions
I
V
I
V
di/dt =4000A/µs
F
F
V
V
GE
R
Test Conditions
V
I
V
V
Test Conditions
V
f = 1MHz
Inductive Switching (25°C)
V
V
I
R
Inductive Switching (125°C)
V
V
I
R
= 800A
= 800A
C
C
C
= 300V
GE
CE
GE
GE
GE
GE
GE
Bus
G
GE
Bus
G
= 800A
= 800A
= 0V
= 660A
= 4.7Ω
= 4.7Ω
= 600V
= 0V
= 15V
= V
= 20V, V
= 0V, V
= ±15V
= ±15V
= 300V
= 300V
CE
, I
CE
C
CE
= 6mA
= 25V
= 0V
T
T
T
T
T
T
T
T
j
j
j
j
j
j
j
j
Diode
= 25°C
= 25°C
= 25°C
= 125°C
= 25°C
= 125°C
= 125°C
= 125°C
IGBT
M6
M4
APTGF660U60D4
2500
Min
-40
-40
-40
Min
Min
Min
4.5
3
1
Typ
1.25
1.95
Typ
Typ
Typ
210
420
250
450
1.2
2.2
5.5
3.2
52
87
36
86
83
93
95
18
25
1
1
0.045
0.085
Max
Max
150
125
125
420
Max
2.45
Max
500
400
1.6
6.5
5
2
°C/W
Unit
Unit
N.m
Unit
Unit
mA
µC
µA
°C
nA
nF
mJ
V
V
V
V
ns
ns
g
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