APTGF150DH120G Microsemi Power Products Group, APTGF150DH120G Datasheet - Page 4
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APTGF150DH120G
Manufacturer Part Number
APTGF150DH120G
Description
IGBT MODULE NPT ASYM BRIDGE SP6
Manufacturer
Microsemi Power Products Group
Datasheet
1.APTGF150DH120G.pdf
(5 pages)
Specifications of APTGF150DH120G
Igbt Type
NPT
Configuration
Asymmetrical Bridge
Voltage - Collector Emitter Breakdown (max)
1200V
Vce(on) (max) @ Vge, Ic
3.7V @ 15V, 150A
Current - Collector (ic) (max)
200A
Current - Collector Cutoff (max)
350µA
Input Capacitance (cies) @ Vce
10.2nF @ 25V
Power - Max
961W
Input
Standard
Ntc Thermistor
No
Mounting Type
Chassis Mount
Package / Case
SP6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
APTGF150DH120G
Manufacturer:
MICROSEMI/美高森美
Quantity:
20 000
Typical Performance Curve
300
250
200
150
100
300
250
200
150
100
70
60
50
40
30
20
10
0.14
0.12
0.08
0.06
0.04
0.02
50
Switching Energy Losses vs Gate Resistance
50
0
0.1
0
0
0.00001
0
0
0
5
V
V
I
T
C
CE
G E
J
5
0.1
= 150A
0.7
0.05
0.9
0.3
Output Characteristics (V
= 125°C
0.5
= 600V
=15V
6
1
10 15 20 25 30 35 40 45 50
Gate Resistance (ohms)
Transfert Characteristics
maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration
7
2
0.0001
8
V
T
V
J
T
CE
GE
=125°C
Eon
J
3
=25°C
(V)
Eoff
(V)
T
9
J
=125°C
T
J
=25°C
4
10
GE
=15V)
rectangular Pulse Duration (Seconds)
0.001
www.microsemi.com
5
11
12
6
Single Pulse
0.01
350
300
250
200
150
100
56
48
40
32
24
16
300
250
200
150
100
50
8
0
50
0
0
0
0
APTGF150DH120G
0
V
V
R
T
V
T
R
Reverse Bias Safe Operating Area
T
Energy losses vs Collector Current
CE
GE
J
G
J
GE
G
J
= 125°C
=125°C
= 5.6 Ω
=5.6 Ω
0.1
= 125°C
= 600V
= 15V
=15V
50
300
1
Output Characteristics
100
2
600
I
C
V
150
V
V
(A)
CE
GE
3
CE
(V)
1
=20V
900
(V)
200
IGBT
4
Eon
1200
V
250
V
GE
V
G E
5
GE
Eoff
=15V
=9V
=12V
1500
300
10
6
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